Memory-aware pre-fetching and cache bypassing systems and methods

ABSTRACT

Systems, apparatuses, and methods related to memory management are described. For example, these may include a first memory level including memory pages in a memory array, a second memory level including a cache, a pre-fetch buffer, or both, and a memory controller that determines state information associated with a memory page in the memory array targeted by a memory access request. The state information may include a first parameter indicative of a current activation state of the memory page and a second parameter indicative of statistical likelihood (e.g., confidence) that a subsequent memory access request will target the memory page. The memory controller may disable storage of data associated with the memory page in the second memory level when the first parameter associated with the memory page indicates that the memory page is activated and the second parameter associated with the memory page is greater than or equal to a threshold.

BACKGROUND

The present disclosure generally relates to computing systems and, moreparticularly, to memory interfaces implemented in computing systems.

Generally, a computing system includes a processing sub-system and amemory sub-system, which may store data accessible to processingcircuitry of the processing sub-system. For example, to perform anoperation, the processing circuitry may execute correspondinginstructions retrieved from a memory device implemented in the memorysub-system. In some instances, data input to the operation may also beretrieved from the memory device. Additionally or alternatively, dataoutput (e.g., resulting) from the operation may be stored in the memorydevice, for example, to enable subsequent retrieval. However, at leastin some instances, operational efficiency of a computing system may belimited by its architecture, for example, which governs the sequence ofoperations performed in the computing system.

BRIEF DESCRIPTION OF THE DRAWINGS

Various aspects of the present disclosure may be better understood uponreading the following detailed description and upon reference to thedrawings in which:

FIG. 1 is a block diagram of a computing system that includes aprocessing sub-system and a memory sub-system, in accordance with anembodiment of the present disclosure;

FIG. 2 is a block diagram of an example of the processing sub-system ofFIG. 1 and a processor-side of the memory sub-system of FIG. 1, inaccordance with an embodiment of the present disclosure;

FIG. 3 is a block diagram of an example of a dedicated lower (e.g.,cache and/or pre-fetch buffer) memory level implemented in the computingsystem of FIG. 1, in accordance with an embodiment of the presentdisclosure;

FIG. 4 is a block diagram of an example of a memory-side of the memorysub-system of FIG. 1, in accordance with an embodiment of the presentdisclosure;

FIG. 5 is a block diagram of an example memory array implemented in thememory sub-system of FIG. 4, in accordance with an embodiment of thepresent disclosure;

FIG. 6 is a diagrammatic representation of state information associatedwith the memory array of FIG. 5, in accordance with an embodiment of thepresent disclosure;

FIG. 7 is a flow diagram of an example process for operating the memoryarray of FIG. 5 and updating the state information of FIG. 6, inaccordance with an embodiment of the present disclosure;

FIG. 8 is a flow diagram of an example process for operating theprocessor-side memory sub-system of FIG. 2, in accordance with anembodiment of the present disclosure;

FIG. 9 is a flow diagram of an example process for operating thememory-side memory sub-system of FIG. 4 in response to a read memoryaccess request, in accordance with an embodiment of the presentdisclosure;

FIG. 10 is a flow diagram of an example process for determining whetherto enable a cache bypass in the memory sub-system of FIG. 1, inaccordance with an embodiment of the present disclosure;

FIG. 11 is a flow diagram of an example process for operating the memorysub-system of FIG. 1 in response to a write memory access request, inaccordance with an embodiment of the present disclosure;

FIG. 12 is a flow diagram of an example process for determining whetherto enable pre-fetching to the dedicated lower memory level of FIG. 3, inaccordance with an embodiment of the present disclosure; and

FIG. 13 is a block diagram of a portion of the computing system of FIG.1 including a memory controller implemented using a pre-fetchcontroller, a cache controller, a main memory controller, and amemory-aware controller, in accordance with an embodiment of the presentdisclosure.

DETAILED DESCRIPTION

The present disclosure provides techniques that facilitate improvingoperational efficiency of computing systems, for example, by mitigatingarchitectural features that may otherwise limit operational efficiency.Generally, a computing system may include various sub-systems, such as aprocessing sub-system and/or a memory sub-system. In particular, theprocessing sub-system may include processing circuitry, for example,implemented in one or more processors and/or one or more processorcores. The memory sub-system may include one or more memory device(e.g., chips or integrated circuits), for example, implemented on amemory module, such as a dual in-line memory module (DIMM), and/ororganized to implement one or more memory arrays (e.g., array of memorycells).

Generally, during operation of a computing system, processing circuitryimplemented in its processing sub-system may perform various operationsby executing corresponding instructions, for example, to determineoutput data by performing a data processing operation on input data.Additionally, a processing sub-system may generally include one or moreregisters, which provide storage locations directly accessible to itsprocessing circuitry. However, storage capacity of registers implementedin a processing sub-system is generally limited.

As such, a processing sub-system is often communicatively coupled to amemory sub-system that provides additional storage locations, forexample, via a memory array implemented in one or more memory devices.Generally, a memory array may include memory cells coupled to word linesformed in a first (e.g., horizontal) direction and to bit lines formedin a second (e.g., vertical or orthogonal) direction. In some instances,the memory cells in a memory array may be organized into one or morememory pages, for example, each corresponding with a memory cell row ofthe memory array. In other words, at least in such instances, a memorypage in the memory array may include each of the memory cells coupled acorresponding word line.

Additionally, in some instances, the memory cells in a memory page maybe organized into one or more data block storage locations, for example,each corresponding with a memory cell column of the memory array. Inother words, at least in such instances, a data block storage locationin a memory page may include each of the memory cells coupled to one ofmultiple corresponding bit lines. Moreover, to facilitate reading (e.g.,retrieving or loading) data from a memory array and/or writing (e.g.,storing) data to the memory array, the bit lines of each column of thememory array may be coupled to corresponding amplifier circuitry, forexample, which includes a driver (e.g., writing) amplifier and/or asense (e.g., reading) amplifier. In other words, at least in someinstances, a data block storage location in a memory array may beidentified by a (e.g., physical) memory address that includes acorresponding row (e.g., page) address and column address pairing.

To facilitate accessing storage locations in a memory array, the wordlines of the memory array may be coupled to row select (e.g., decoder)circuitry and the amplifier circuitry, which is coupled to the bit linesof the memory array, may be coupled to column select (e.g., decoder)circuitry. For example, to enable (e.g., provide) access to storagelocations in a specific memory page, the row select circuitry mayactivate the memory page by outputting an activation (e.g., logic high)control signal to a corresponding word line. Additionally, beforeactivating a memory page in its deactivated state, in some instances,the row select circuitry may pre-charge the memory page, for example, byoutputting a pre-charge control signal to a corresponding word line.Furthermore, to enable access to a specific data block storage locationin an activated memory page, the column select circuitry may output acolumn select (e.g., logic high) control signal to correspondingamplifier circuitry, thereby enabling (e.g., instructing) the amplifiercircuitry to write (e.g., store) a data block to the specific data blockstorage location and/or to read (e.g., retrieve or load) a data blockcurrently stored at the specific data block storage location.

In some instances, a processor-side (e.g., host) of a computing systemmay request access to a storage location (e.g., memory address) in amemory sub-system via one or more memory access requests, which indicateaccess parameters to be used by the memory sub-system. For example, tostore (e.g., write) a data block to the memory sub-system, theprocessor-side of the computing system may output a write memory accessrequest that indicates one or more write access parameters, such as avirtual memory address used by processing circuitry to identify the datablock, a physical memory address (e.g., row address and column addresspairing) in the memory sub-system at which the data block is to bestored, size (e.g., bit depth) of the data block, and/or a write enableindicator (e.g., bit). Additionally or alternatively, to retrieve (e.g.,read) a data block from the memory sub-system, the processor-side of thecomputing system may output a read memory access request that indicatesread access parameters, such as a virtual memory address used byprocessing circuitry to identify the data block, a physical memoryaddress (e.g., row address and column address pairing) in the memorysub-system at which the data block is expected to be stored, size (e.g.,bit depth) of the data block, and/or a read enable indicator (e.g.,bit).

In response to receipt of a read memory access request, a memorysub-system may search for a data block targeted by the read memoryaccess request based at least in part on the read access parametersindicated in the read memory access request. For example, the memorysub-system may determine a target value of a tag (e.g., blockidentifier) parameter (e.g., metadata) expected to be associated withthe target data block based at least in part on a virtual memory addressand/or a physical memory address indicated in the read memory accessrequest. Additionally, the memory sub-system may identify (e.g., find)the target data block by successively searching the value of tagparameters associated with valid data blocks stored therein against thetarget tag parameter value. Once a match is detected, the memorysub-system may identify an associated data block as the target datablock and, thus, return the associated data block to the processingsub-system, for example, to enable processing and/or execution by itsprocessing circuitry. Accordingly, at least in some instances,operational efficiency of a computing system may be dependent at leastin part on data retrieval latency (e.g., duration before target data isreturned) provided by its memory sub-system.

To facilitate improving data access speeds (e.g., retrieval latency), insome instances, total storage capacity of a memory sub-system may bedistributed across multiple hierarchical memory levels (e.g., layers).Generally, a hierarchical memory sub-system may include a lowest memorylevel closest to the processing circuity and a highest memory levelfarthest from the processing circuitry. Additionally, in some instances,the hierarchical memory sub-system may include one or more intermediatememory levels between the lowest memory level and the highest memorylevel. In other words, an intermediate memory level may be implementedfarther from the processing circuitry compared to the lowest memorylevel and closer to the processing circuitry compared to the highestmemory level.

Generally, when data is targeted (e.g., demanded and/or requested), ahierarchical memory sub-system may attempt to retrieve the target datafrom the lowest hierarchical before successively progressing to highermemory levels if the target data results in a miss (e.g., target tagvalue does not match any valid tag values). For example, the memorysub-system may check whether a target data block is currently stored inthe lowest memory level. When the target data block results in a miss inthe lowest memory level, the memory sub-system may then check whetherthe target data block is currently stored in the next lowest memorylevel, and so on.

Thus, to facilitate improving data access speeds, a hierarchical memorysub-system may be implemented such that a lower memory level generally(e.g., at least in on average) provides faster data access speedcompared to a higher memory level. However, data access speed providedby a memory level may generally be dependent on its storage capacity,for example, since increasing storage capacity may enable an increase inthe number of valid data blocks stored therein and, thus, potentiallyincrease the amount of searching performed before a target data block isidentified and returned. As such, to facilitate providing faster dataaccess speeds, a lower memory level may be implemented with less (e.g.,smaller) storage capacity compared to a higher memory level.

However, implementing a lower memory level with less storage capacitymay limit the total storage capacity provided by a memory sub-system. Assuch, to facilitate maintaining or even increasing total storagecapacity provided by the memory sub-system, a higher memory level may beimplemented with more (e.g., larger) storage capacity compared to alower memory level. In other words, a memory sub-system may beimplemented with multiple hierarchical memory levels to facilitatebalancing tradeoffs between average data access speed (e.g., operationalefficiency) and total storage capacity provided.

To facilitate achieving the balance, in some instances, a memorysub-system may be implemented with multiple different memory types,which provide varying tradeoffs that affect operational efficiencyand/or implementation associated cost. For example, volatile memory,such as dynamic random-access memory (DRAM) or static random-accessmemory (SRAM), may provide faster data transfer (e.g., read and/orwrite) speeds compared to non-volatile memory. Thus, to facilitateproviding faster data access speeds, in some instances, a lower (e.g.,second highest) memory level in a memory sub-system may be providedusing a volatile memory array, for example, implemented in one or morevolatile memory (e.g., DRAM) devices (e.g., modules or chips) coupled toa memory (e.g., external communication) bus.

On the other hand, non-volatile memory, such as flash (e.g., NAND)memory, phase-change memory (e.g., 3D XPoint™) memory, or ferroelectricrandom access memory (FeRAM), may provide higher (e.g., greater) datastorage density compared to volatile memory. Additionally, non-volatilememory cells, in contrast to volatile memory cells, may maintain theirstored values or data bits even while in an unpowered state. Thus, insome instances, a higher (e.g., highest) memory level in a memorysub-system may be provided using a non-volatile memory array, forexample, implemented in one or more non-volatile memory (e.g., hard diskor solid state) devices (e.g., drives) coupled to the memory (e.g.,external communication) bus.

To facilitate further improving operational efficiency, in addition tomemory arrays, in some instances, a memory sub-system may include one ormore dedicated (e.g., actual) lower memory levels implemented using acache and/or a buffer, such as a pre-fetch buffer. Generally, adedicated cache (e.g., lower memory level) may be implemented and/oroperated to store (e.g., cache) a copy (e.g., instance) of a data blockoutput from a processing sub-system for storage in a higher (e.g.,memory array) memory level of the memory sub-system and/or a data blockthat is retrieved from the higher memory level in response to a (e.g.,demand) memory access request received from the processor-side of thecomputing system. Additionally or alternatively, a memory sub-system maybe implemented and/or operated to pre-fetch a data block, which isexpected to be demanded (e.g., targeted or requested) by a processingsub-system during an upcoming control horizon (e.g., time period or oneor more clock cycles), from a higher (e.g., memory array) memory levelsuch that a copy of the data block is stored in a dedicated lower (e.g.,cache and/or pre-fetch buffer) memory level before actually beingdemanded by the processing sub-system. As such, if a data block storedin the dedicated lower memory level is subsequently demanded, the memorysub-system may supply the demanded data block to the processingsub-system from the lower memory level instead of from the higher memorylevel, which, at least in some instances, may facilitate improvingoperational efficiency, for example, due to the lower memory levelgenerally (e.g., on average) providing faster data retrieval latencycompared to the higher memory level.

However, at least in some instances, data communication via an externalcommunication bus, such as a memory bus, is generally slower than datacommunication via an internal communication bus, for example, due totiming differences between components on a processor-side of the memorybus and components on a memory-side of the memory bus, the memory busbeing shared with other computing sub-systems, and/or communicationdistance along the memory bus. In other words, at least in someinstances, data communication between (e.g., internal to) theprocessor-side components may be faster than data communication betweenthe processor-side components and the memory-side components via thememory bus. Accordingly, to facilitate improving computing systemoperational efficiency, in some instances, a portion of a memorysub-system may be implemented on a processor-side of the memory bus and,thus, the computing system.

In other words, at least in some instances, a memory sub-system mayinclude a processor-side (e.g., first) portion and a memory-side (e.g.,second) portion communicatively coupled via a memory (e.g., externalcommunication) bus. For example, the memory-side of the memorysub-system may include one or more memory-side caches, one or morememory-side pre-fetch buffers, one or more memory arrays, or anycombination thereof. Additionally or alternatively, the processor-sideof the memory sub-system may include one or more processor-side cachesand/or one or more processor-side pre-fetch buffers.

Moreover, at least in some instances, each hierarchical memory levelprovided on a processor-side of a memory sub-system may be utilized as alower (e.g., cache and/or pre-fetch buffer) memory level compared to amemory level implemented on a memory-side of the memory sub-system. Assuch, when a data block is demanded by a processing sub-system, theprocessor-side of the memory sub-system may determine whether thedemanded data block is currently stored therein and, thus, whether thedemanded data block results in a processor-side miss. When the demandeddata block results in a processor-side miss, the processor-side of thememory sub-system may output a demand (e.g., read) memory accessrequest, which targets return of the data block demanded by theprocessor sub-system, to a memory-side of the memory sub-system via amemory bus. Additionally or alternatively, the processor-side of thememory sub-system may predict what data block will be demanded by theprocessing sub-system during an upcoming control horizon and output apre-fetch (e.g., read) memory access request, which targets return ofthe data block expected to be demanded by the processor sub-system, tothe memory-side memory sub-system via the memory bus, for example, whenthe data block is not currently stored in the processor-side of thememory sub-system and, thus, results in a processor-side miss.

As described above, in response to receipt of a read memory accessrequest, a memory sub-system may output (e.g., return) a data blocktargeted by the read memory access request to a memory bus.Additionally, as described above, a lower memory level generallyprovides faster data access speeds compared to a higher memory level. Assuch, at least in some instances, a processor-side of a memorysub-system may store a copy of a data block returned from a memory-sideof the memory sub-system in a dedicated lower (e.g., cache and/orpre-fetch buffer) memory level implemented therein, which, at least insome instances, may facilitate improving computing system operationalefficiency, for example, by enabling the data block to be supplied fromthe lower memory level instead of a higher memory level if the datablock is subsequently demanded by the processing sub-system.

However, as described above, to facilitate providing faster data accessspeeds, a dedicated lower (e.g., cache and/or pre-fetch buffer) memorylevel may be implemented with less storage capacity compared to a highermemory level. As such, to make room for storage of a data block in alower memory level, at least in some instances, another data block maybe evicted from the lower memory level, for example, when the other datablock is not expected to be targeted (e.g., demanded) during an upcomingcontrol horizon. However, in some instances, storing a data block in alower memory level may pollute the lower memory level and actuallyreduce computing system operational efficiency, for example, due to anevicted data block actually being targeted during the control horizonand, thus, being retrieved from a higher (e.g., memory array and/ormemory-side) memory level instead of the lower memory level.

Moreover, as described above, a memory sub-system may provide access toone or more data block storage locations in an activated (e.g., open)memory page of a memory array. Additionally, as described above, amemory sub-system may activate a memory page at least in part bysupplying an activation (e.g., logic high) control signal to acorresponding word line, for example, after supplying a pre-chargecontrol signal to the corresponding word line to pre-charge the memorypage. As such, at least in some instances, activating a deactivated(e.g., closed) memory page to provide access to one or more storagelocations in the memory page may consume electrical power and/or incuran access delay and, thus, affect (e.g., reduce) operational (e.g.,power usage and/or latency) efficiency of a computing system in whichthe memory sub-system is deployed.

Accordingly, to facilitate improving computing system operationalefficiency, the present disclosure provides techniques for implementingand/or operating a memory sub-system to selectively disable storage ofdata blocks in a dedicated (e.g., actual) cache and/or a dedicated(e.g., actual) pre-fetch buffer based at least in part on the state of amemory array implemented in the memory sub-system. For example, based atleast in part on the state of the memory array, the memory sub-systemmay selectively disable storage (e.g., caching) of a data block in adedicated cache and instead artificially treat a currently activatedmemory page as a cache memory level (e.g., row buffer). Additionally oralternatively, based at least in part on the state of the memory array,the memory sub-system may selectively disable pre-fetching of a datablock to a dedicated cache and/or a dedicated pre-fetch buffer andinstead artificially treat a currently activated memory page as a lower(e.g., cache and/or pre-fetch buffer) memory level (e.g., row buffer),for example, due at least in part to data access latency provided by thecurrently activated memory page being similar to data access latencyprovided by the dedicated cache and/or the dedicated pre-fetch buffer.

In other words, as will be described in more detail below, the presentdisclosure provides techniques for implementing and/or operating amemory sub-system to control data storage therein based at least in parton the state of one or more memory arrays implemented in the memorysub-system. To facilitate controlling data storage, the memorysub-system may include one or more memory controllers (e.g., controlcircuitry and/or control logic). For example, when implemented on aprocessor-side of a memory bus and a memory-side of the memory bus, thememory sub-system may include a first (e.g., memory-side) memorycontroller implemented and/or operated to control data storage on thememory-side of the memory sub-system and a second (e.g., processor-side)memory controller implemented and/or operated to control data storage onthe processor-side of the memory sub-system.

Additionally or alternatively, a memory controller may include multiplecontrollers (e.g., control circuitry and/or control logic), such as acache controller, a pre-fetch controller, a main memory controller,and/or a memory-aware controller. In some embodiments, a cachecontroller may be implemented and/or operated to control data storage inone or more caches and, thus, corresponding cache (e.g., lower) memorylevels of a memory sub-system, for example, by identifying one or morecandidate data blocks to be considered for storage (e.g., caching) in acache memory level in addition to being stored in a higher (e.g., memoryarray) memory level. Similarly, in some embodiments, a pre-fetchcontroller may be implemented and/or operated to control data storage inone or more pre-fetch buffers and, thus, corresponding pre-fetch buffer(e.g., lower) memory level of a memory sub-system. Additionally oralternatively, a pre-fetch controller may facilitate predictivelycontrolling data storage in one or more lower (e.g., pre-fetch bufferand/or cache) memory levels of a memory sub-system, for example, byidentifying one or more candidate data blocks to be considered forpre-fetching from a higher (e.g., memory array) memory level into alower memory level.

Furthermore, in some embodiments, a main memory controller, such as aDRAM memory controller, may be implemented and/or operated to controldata storage in one or more memory arrays and, thus, correspondingmemory array (e.g., higher) memory levels. In particular, at least insome embodiments, a memory controller may control operation of a memoryarray in accordance with an open page policy, for example, such that acurrently activated memory page remains activated until a different(e.g., currently deactivated) memory page is targeted at which point thecurrently activated memory page is deactivated and the different memorypage is subsequently activated (e.g., after pre-charging). In otherwords, at least in such embodiments, an activation period of a memorypage may span from the time the memory page is initially activated(e.g., to fulfill a memory access request) until the time the memorypage is subsequently deactivated (e.g., due to a different memory pagebeing targeted).

Moreover, in some embodiments, a memory-aware controller may selectivelydetermine whether to disable caching and/or pre-fetching of a candidatedata block based at least in part on a current state of one or morememory arrays implemented in a memory sub-system. As described above, insome embodiments, a main memory controller, such as a DRAM memorycontroller, may be implemented and/or operated to control data storagein a memory array. Thus, at least in such embodiments, the main memorycontroller may determine a current state of the memory array and providestate information indicative of the current state of the memory array tothe memory-aware controller, thereby enabling the memory-awarecontroller to selectively disabling caching and/or pre-fetching based atleast in part on the current state of the memory array.

In some embodiments, state information associated with a memory arraymay identify the activation state of memory pages included in the memoryarray. In other words, in some embodiments, the state information mayidentify which memory page in the memory array is currently activated(e.g., open) and/or which one or more memory pages in the memory arrayare currently deactivated (e.g., closed). For example, the stateinformation may indicate that a first memory page (e.g., row) in thememory array is currently in its activated (e.g., open) state and that asecond (e.g., different) memory page in the memory array is currently inits deactivated (closed) state.

In other words, in some embodiments, state information associated with amemory array may include state information associated with one or morememory pages in the memory array. For example, the memory array stateinformation may include first memory page state information indicativeof a current state (e.g., activation state) of a first memory page inthe memory array, second memory page state information indicative of acurrent state of a second memory page in the memory array, and so on. Tofacilitate indicating activation state, in some embodiments, stateinformation may include one or more activation state parameters, whicheach indicates a current activation state of a corresponding memorypage. For example, a first activation state parameter in the firstmemory page state information may be a “1-bit” (e.g., logic high bit) toindicate that the first memory page is currently in its activated (e.g.,open) state and a second activation parameter in the second memory pagestate information may be a “0-bit” (e.g., logic low bit) to indicatethat the second memory page is currently in its deactivated (e.g.,closed) state.

As such, in some embodiments, a memory controller may update stateinformation associated with a memory array each time a memory page inthe memory array is activated or deactivated. To help illustrate,continuing with the above example, when the first memory page issubsequently deactivated, the memory controller may update the firstactivation state parameter to indicate that the first memory page is nowin its deactivated state. Similarly, when the second memory page issubsequently activated, the memory controller may update the secondactivation state parameter to indicate that the second memory page isnow in its activated state.

To facilitate associating state information with corresponding memorypages, in some embodiments, a memory sub-system may store the stateinformation such that state information associated with each memory pageis accessible using its row (e.g., page) address, for example, via acache. As will be described in more detail below, to facilitateimproving computing system operational efficiency, in some embodiments,a memory controller may selectively disable pre-fetching and/or cachingof a candidate data block in a dedicated (e.g., actual) lower (e.g.,cache and/or pre-fetch buffer) memory level based at least in part onstate information associated with a currently activated memory pageand/or state information associated with a memory page targeted by amemory access request currently being fulfilled. Accordingly, at leastin such embodiments, the memory controller may determine (e.g.,retrieve) state information associated with a memory page each time thememory page is targeted by a memory access request, for example, byusing the row address of the memory page to load the associated stateinformation from the cache into a register of the memory controller.

In addition to an activation state parameter, in some embodiments, stateinformation associated with a memory page may include a page hit (e.g.,row hit or subsequent target) confidence parameter, which indicates theconfidence (e.g., statistical likelihood and/or statistical probability)that a subsequent (e.g., next successive) memory access request willtarget the memory page. In particular, in some embodiments, the value ofa page hit confidence parameter associated with a memory page at thebeginning of an activation period may be indicative of the number oftimes the memory page is expected to be successively be targeted duringthe activation period. Generally, when a memory page is expected to betargeted a larger number of times during an activation period, a memorycontroller may predict that a subsequent memory access request is morelikely to target the memory page while it is already in its activatedstate (e.g., due to targeting by a directly previous memory accessrequest) and, thus, more likely to result in a page (e.g., row buffer)hit. Conversely, when the memory page is expected be targeted a fewernumber of times during the activation period, the memory controller maypredict that the subsequent memory access request more likely to targetthe memory page while it is in its deactivated state (e.g., due to adirectly previous memory access request targeting a different memorypage) and, thus, more likely to result in a page (e.g., row buffer)miss. In other words, when the memory page is expected be targeted afewer number of times during the activation period, the memorycontroller may predict that the subsequent memory access request lesslikely to target the memory page while it is in its activated state and,thus, less likely to result in a page hit.

In other words, based at least in part on the value of a page hitconfidence parameter associated with an activated memory page, in someembodiments, a memory controller may determine (e.g., predict) theconfidence (e.g., statistical likelihood and/or statistical probability)that a subsequent (e.g., next successive) memory access request will hitthe activated memory page. Since memory access patterns are oftensomewhat cyclical (e.g., repetitive), in some embodiments, a memorycontroller may determine (e.g., update) the value of a page hitconfidence parameter to be associated with a memory page based at leastin part on the number of times the memory page previous resulted in apage hit, for example, during a recent series (e.g., sequence) of memoryaccess request. In other words, when an activation period is ended dueto the memory page being deactivated, the memory controller may updatethe state information associated with the memory page at least in partby updating the value of a page hit confidence parameter included in thestate information based at least in part on the number of times thememory page was targeted during the activation period, for example, inaddition to updating an activation state parameter included in the stateinformation to indicate that memory page is now in its deactivatedstate.

To facilitate tracking the number of times a memory page is targeted, insome embodiments, a memory controller may include and/or utilize one ormore counters. As an illustrative non-limiting example, in someembodiments, the memory controller may load a counter value associatedwith a memory page when the memory page is initially activated tofulfill a memory access request. Additionally, while the memory pageremains activated, the memory controller may increment its associatedcounter value each time the memory page is subsequently targeted by asuccessive memory access request. On the other hand, when a subsequentmemory access request targets a different (e.g., currently deactivated)memory page, the memory controller may update the counter valueassociated with the (e.g., current activated) memory page and update apage hit confidence parameter included in associated state informationaccordingly.

As another illustrative non-limiting example, in some embodiments, thememory controller may reset the value of a counter (e.g., to zero) whena memory page is initially activated to fulfill a (e.g., first) memoryaccess request. Additionally, while the memory page remains activated,the memory controller may increment the value of the counter each timethe memory page is subsequently targeted by a successive memory accessrequest. To help illustrate, continuing with the above example, thememory controller may increment the counter from a value of zero to avalue of one when the memory page is subsequently targeted by a secondmemory access request, from a value of one to a value of two when thememory page is subsequently targeted by a third memory access request,and so on.

On the other hand, when a memory page is deactivated at the end of anactivation period, a memory controller may update a page hit confidenceparameter included in associated state information based at least inpart on the number of times the memory page was successively targetedduring the activation period. In other words, continuing with the aboveexample, when the memory page is subsequently deactivated, the memorycontroller may update the value of the associated page hit confidenceparameter based at least in part on the counter value resulting at theend of the activation period, for example, before the counter is resetdue to a next memory access request targeting and, thus, resulting in adifferent memory page being activated. As an illustrative example, insome embodiments, the memory controller may update the page hitconfidence parameter by overwriting a previous value (e.g., determinedat beginning of the activation period) with the counter value resultingat the end of the activation period.

Additionally or alternatively, a memory controller may update a page hitconfidence parameter associated with a memory page based at least inpart on one or more previous states of the memory page. For example, atthe end of an activation period, the memory controller may update thepage hit confidence parameter associated with the memory page based onan (e.g., weighted) average of the counter value resulting at the end ofthe activation period and the value of the page hit confidence parameterassociated with the memory page at the beginning of the activationperiod, thereby producing a moving average. Additionally oralternatively, the memory controller may update the page hit confidenceparameter by averaging the counter values resulting at the end ofmultiple activation periods, for example, such that counter valuesresulting at the end of more recent activation periods are weighted moreheavily than counter values results at the end of older activationperiods.

In any case, as described above, a memory controller may determine(e.g., retrieve) state information, which includes a page hit confidenceparameter and an activation state parameter, associated with a memorypage in response to the memory page being targeted by a memory accessrequest. Additionally, as described above, in some embodiments, a memoryaccess request received by a memory controller may be a pre-fetch (e.g.,read) memory access request that targets a data block stored in a memoryarray (e.g., higher) memory level for pre-fetching to a dedicated (e.g.,actual) lower (e.g., cache and/or pre-fetch buffer) memory level. Assuch, in response to receipt of a pre-fetch memory access request, thememory controller may determine state information associated with atarget memory page at which the data block targeted for pre-fetching iscurrently stored.

Furthermore, as described above, in some embodiments, a memory accessrequest received by a memory controller may be a demand memory accessrequest. For example, the demand memory access request may be a readmemory access request that demands (e.g., targets) return of a datablock stored in a memory array (e.g., higher) memory level. Additionallyor alternatively, the demand memory access request may be a write memoryaccess request that demands storage of a data block in a memory array(e.g., higher) memory level. As such, in response to receipt of a demandmemory access request, the memory controller may determine stateinformation associated with a demanded (e.g., target) memory page inwhich a data block is targeted for storage and/or a demanded memory pagein which a data block targeted for retrieval is currently stored.

Moreover, as described above, in some instances, a copy (e.g., instance)of a data block targeted by a demand memory access request mayadditionally be stored in a dedicated cache in an effort to improvecomputing system operational efficiency. However, as described above,storage capacity of a dedicated lower (e.g., pre-fetch buffer and/orcache) memory level is generally limited compared to a memory array(e.g., higher) memory level. Additionally, as described above,pre-charging and activating a memory page to enable writing to and/orreading from storage locations therein generally consumes electricalpower. As such, at least in some instances, automatically pre-fetchingand/or caching a data block in a dedicated lower (e.g., cache and/orpre-fetch buffer) memory level may actually reduce computing systemoperational efficiency, for example, due to the limited storage capacityresulting in another data block being prematurely evited from thededicated lower memory level and/or activation of a memory page in whichthe data block is stored increasing power consumption.

Accordingly, to facilitate improving computing system operationalefficiency, in some embodiments, a memory controller may selectively(e.g., predictively and/or adaptively) disable (e.g., block)pre-fetching and/or caching of a candidate data block in a dedicatedlower (e.g., cache and/or pre-fetch buffer) memory level based at leastin part on state information associated with a memory page that iscurrently in its activated state and/or that is currently being targetedto fulfill a memory access request. For example, based at least in parton the page hit confidence parameter associated with a memory page, thememory controller may determine (e.g., predict) the confidence (e.g.,statistical likelihood and/or statistical probability) that a subsequent(e.g., next successive) memory access request will also target thememory page. Additionally, based at least in part on the activationstate parameter associated with a memory page, the memory controller maydetermine whether the memory page is already (e.g., currently) in itsactivated state, for example, due to a (e.g., directly) previous memoryaccess request targeting the same memory page.

In other words, based at least in part on state information determinedin response to a memory access request, in some embodiments, a memorycontroller may determine whether a memory page targeted by the memoryaccess request is currently in its activated state. As described above,in some embodiments, a memory controller may artificially treat acurrently activated memory page as a lower (e.g., cache and/or pre-fetchbuffer) memory level when pre-fetching and/or caching in a dedicated(e.g., actual) lower memory level is selectively disabled. In otherwords, when pre-fetching and/or caching in a dedicated lower memorylevel is selectively disabled in such embodiments, the memory controllermay artificially treat the currently activated memory page in a memoryarray as a lower (e.g., row buffer) memory level compared to currentlydeactivated memory pages in the memory array, for example, such that thememory controller attempts to retrieve a demanded data block from thecurrently activated memory page before attempting to retrieve thedemanded data block from the currently deactivated memory pages and/orfrom a dedicated (e.g., actual) lower memory level.

In fact, in some embodiments, the memory controller may utilizedifferent decision criteria for determining whether to enable or disablepre-fetching and/or caching in a dedicated lower (e.g., cache and/orpre-fetch buffer) memory level depending on whether a target memory pageis currently in its activated state or its deactivated state. Forexample, when a memory page in its activated state is targeted by amemory access request, the memory controller may determine that asubsequent (e.g., next successive) memory access request is less likelyto target the same (e.g., currently activated) memory page when thevalue of a page hit confidence parameter associated with the memoryrequest is less than a (e.g., first) confidence (e.g., statisticallikelihood and/or statistical probability) threshold. In other words, insuch instances, the memory controller may predict that the subsequentmemory access request will target a different (e.g., currentlydeactivated) memory page and, thus, miss the (e.g., currently activated)memory page, thereby resulting in the memory page being in itsdeactivated state when access to the memory page is subsequentlytargeted (e.g., demanded). Accordingly, in such instances, the memorycontroller may enable pre-fetching and/or caching (e.g., disable cachebypass) of a candidate data block in a dedicated lower (e.g., pre-fetchbuffer and/or cache) memory level, which, at least in some instances,may facilitate improving computing system operational efficiency, forexample, by enabling the candidate data block, if subsequently demanded,to be supplied from the dedicated lower memory level instead of a memorypage in a memory array (e.g., higher) memory level that is expected tobe in its deactivated state.

Conversely, when a memory page in its activated memory page is targetedby a memory access request, the memory controller may determine that asubsequent (e.g., next successive) memory access request is more likelyto target the same memory page when the value of an associated page hitconfidence parameter is not less than the (e.g., first) confidencethreshold. In other words, in such instances, the memory controller maypredict that the subsequent memory access request will also target and,thus, hit the same (e.g., currently activated) memory page, therebyresulting in the memory page being in its activated state when access tothe memory page is subsequently targeted (e.g., demanded). Accordingly,in such instances, the memory controller may disable pre-fetching and/orcaching (e.g., enable cache bypass) of a candidate data block in thededicated lower memory level, which, at least in some instances, mayfacilitate improving computing system operational efficiency, forexample, by reducing likelihood the candidate data block polluting thededicated lower memory level and instead enabling the candidate datablock, if subsequently demanded, to be supplied from a memory page thatis expected to be in its activated state.

On the other hand, when a target memory page is currently in itsdeactivated state, in some embodiments, a memory controller mayautomatically enable pre-fetching and/or caching of a candidate datablock in a dedicated lower (e.g., cache and/or pre-fetch buffer) memorylevel. In other embodiments, a memory controller may neverthelessselectively disable pre-fetching and/or caching of a candidate datablock in a dedicated lower memory level when a target memory page iscurrently in its deactivated state. For example, when a memory page inits deactivated state is targeted by a memory access request, the memorycontroller may determine that a subsequent memory access request is morelikely to target a currently activated (e.g., different) memory pagewhen the value of a page hit confidence parameter associated with thecurrently activated memory page is greater than a second confidencethreshold. In other words, in such instances, the memory controller maypredict that the subsequent memory access request will target adifferent (e.g., currently activated) memory page and, thus, miss the(e.g., currently deactivated) memory page targeted by the memory accessrequest, thereby resulting in the memory page being in its deactivatedstate when access to the memory page is subsequently targeted (e.g.,demanded). Accordingly, in such instances, the memory controller maydisable pre-fetching and/or caching (e.g., disable cache bypass) of acandidate data block in the dedicated lower memory level, which, atleast in some instances, may facilitate improving computing systemoperational efficiency, for example, by reducing likelihood of thecandidate data block polluting the dedicated lower memory level and/orobviating power consumption resulting from activating the target memorypage and subsequently re-activating the currently activated memory page.

Conversely, when a memory page in its deactivated state is targeted by amemory access request, the memory controller may determine that asubsequent (e.g., next successive) memory access request is less likelyto target a currently activated (e.g., different) memory page when thevalue of a page hit confidence parameter associated with the currentlyactivated memory page is not greater than the second confidencethreshold. In other words, in such instances, the memory controller maypredict that the subsequent memory access request will target a (e.g.,currently deactivated) memory page different from the currentlyactivated memory page. However, since a memory array may concurrentlyinclude multiple deactivated memory pages, at least in some instances,such a determination may have limited relevance to whether the (e.g.,currently deactivated) memory page targeted by the memory access requestwill be in its activated state or its deactivated state when access tothe memory page is subsequently targeted. Accordingly, in suchinstances, the memory controller may enable pre-fetching and/or caching(e.g., enable cache bypass) of a candidate data block in the dedicatedlower memory level, which, at least in some instances, may facilitateimproving computing system operational efficiency, for example, byenabling the candidate data block, if subsequently targeted, to besupplied from the cache instead of the memory array.

In some embodiments, the value of the second confidence threshold, whichis used when a target memory page is currently in its deactivated state,may match the value of the first confidence threshold, which is usedwhen the target memory page is currently in its activated state. Inother embodiments, the value of the second confidence threshold and thevalue of the first confidence threshold may differ. For example, thevalue of the second confidence threshold may be greater than the valueof the first confidence threshold or vice versa.

Moreover, in some embodiments, the value of a (e.g., first or second)confidence threshold used to determine whether to disable pre-fetchingand the value of a corresponding confidence threshold used to determinewhether to determine disable caching may differ. For example, when atarget memory page is in its activated state, a memory controller maydetermine whether to disable pre-fetching based on a (e.g., first)pre-fetch confidence threshold and determine whether to disable cachingbased on a (e.g., first) cache confidence threshold. Additionally oralternatively, when a target memory page is in its deactivated state, amemory controller may determine whether to disable pre-fetching based ona second pre-fetch confidence threshold and determine whether to disablecaching based on a second cache confidence threshold. In any case, aswill be described in more detail below, implementing and/or operating amemory sub-system to selectively disable pre-fetching and/or caching ina dedicated lower (e.g., pre-fetch buffer and/or cache) memory level inthis manner may facilitate improving operational efficiency of thememory sub-system and, thus, a computing system in which the memorysub-system is deployed.

To help illustrate, an example of a computing system 10 (e.g.,apparatus), which includes a processing sub-system 12 (e.g., system) anda memory sub-system 14 (e.g., system), is shown in FIG. 1. It should beappreciated that the depicted example is merely intended to beillustrative and not limiting. In particular, the computing system 10may additionally or alternatively include other computing sub-systems.For example, the computing system 10 may additionally include anetworking sub-system, a radio frequency sub-system, a user inputsub-system, and/or a display sub-system.

Moreover, in some embodiments, the computing system 10 may beimplemented in a single electronic device, such as a desktop computer, aworkstation computer, a laptop computer, a server, a mobile phone, avirtual-reality headset, and/or the like. In other embodiments, thecomputing system 10 may be distributed between multiple electronicdevices. For example, the processing sub-system 12 and the memorysub-system 14 may be implemented in a host device while other computingsub-systems, such as the user input sub-system and/or the displaysub-system, may be implemented in a client (e.g., remote) device. Infact, in some embodiments, a computing sub-system may be distributedbetween multiple electronic devices. For example, a first portion of theprocessing sub-system 12 and/or a first portion of the memory sub-system14 may be implemented in a host device while a second portion of theprocessing sub-system 12 and/or a second portion of the memorysub-system 14 may be implemented in a client device.

In any case, during operation of the computing system 10, the processingsub-system 12 generally performs various operations, for example, todetermine output data by executing instructions in a processor toperform a corresponding data processing operation on input data. Thus,as in the depicted example, the processing sub-system 12 may includeprocessing circuitry 16. In some embodiments, the processing circuitry16 may be included in one or more central processing units (CPUs), oneor more graphics processing units (GPUs), one or more processor cores,or any combination thereof.

Additionally, as in the depicted example, the processing sub-system 12may include one or more registers 22. In some embodiments, a register 22may provide one or more storage locations directly accessible to theprocessing circuitry 16. However, storage capacity of the registers 22is generally limited. Thus, as in the depicted example, the processingsub-system 12 may be communicatively coupled to the memory sub-system14, which provides additional data storage capacity, via one or morecommunication buses 20. In some embodiments, a communication bus 20 mayinclude one or more cables, one or more wires, one or more conductivetraces, one or more communication networks, or any combination thereof.

In other words, the processing sub-system 12 and the memory sub-system14 may communicate via the one or more communication buses 20. Forexample, the processing sub-system 12 may communicate (e.g., output ortransmit) a write memory access request along with data for storage inthe memory sub-system 14 and/or a read memory access request targetingreturn of data previously stored in the memory sub-system 14.Additionally or alternatively, the memory sub-system 14 may communicate(e.g., output or return) target data previously storage therein, forexample, in response to a read memory access request to enableprocessing and/or execution by the processing circuitry 16 of theprocessing sub-system 12.

To provide data storage, as in the depicted example, the memorysub-system 14 may include one or more memory devices 18 (e.g., chips orintegrated circuits). As will be described in more detail below, in someembodiments, the memory devices 18 may include memory cells (e.g.,circuitry) organized into one or more memory arrays 28 and, thus, mayinclude one or more tangible, non-transitory, computer-readable media.For example, the memory sub-system 14 may include one or more memorydevice 18 communicatively coupled to the processing sub-system 12 via anexternal communication (e.g., memory) bus 20.

However, as described above, data communication via an externalcommunication bus 20 is generally slower than data communication withina processor-side of the external communication bus 20 and/or datacommunication within a memory-side of the external communication bus 20.At least in some instances, the difference in communication speed and,thus, resulting data retrieval latency may be due at least in part tothe external communication bus 20 being shared with other computingsub-systems, timing differences between components on the processor-sideof the external communication bus 20 and components on the memory-sideof the external communication bus 20, and/or communication distancebetween the processor-side of the external communication bus 20 and thememory-side of the external communication bus 20.

To facilitate improving provided data access speed, as in the depictedexample, the memory sub-system 14 may include one or more caches 24,which provide faster data access speeds compared to the memory devices18. In some embodiments, a cache 24 may provide storage locationsorganized into one or more cache lines 30, for example, to store aninstance (e.g., copy) of data also stored in a memory array 28implemented in one or more memory devices 18. Accordingly, in someembodiments, a cache 24 may be communicatively coupled between a memorydevice 18 and the processing circuitry 16 of the processing sub-system12 and/or used to implement a lower memory layer compared to a memoryarray 28 implemented in the memory device 18.

For example, the memory sub-system 14 may include one or moreprocessor-side caches 24 implemented on a processor-side of an externalcommunication (e.g., memory) bus 20. In some embodiments, one or more ofthe processor-side caches 24 may be integrated with the processingcircuitry 16. For example, the processor-side caches 24 may include alevel one (L1) cache, a level two (L2) cache, and/or a level three (L3)cache. Additionally or alternatively, the memory sub-system 14 mayinclude one or more memory-side caches 24 implemented on a memory-sideof the external communication bus 20. In other words, in someembodiments, a memory sub-system 14 may include a first (e.g.,processor-side) portion implemented on a processor-side of externalcommunication bus 20 and a second (e.g., memory-side) portionimplemented on a memory-side of the external communication bus 20.

In some embodiments, the computing system 10 may additionally includeone or more pre-fetch buffers 32, which provide faster data accessspeeds compared to the memory devices 18. For example, a processor-sideof the memory sub-system 14 may include a processor-side pre-fetchbuffer 32 distinct (e.g., separate) from its processor-side caches 24.Additionally or alternatively, the memory-side of the memory sub-system14 may a memory-side pre-fetch buffer 32 distinct (e.g., separate) fromits memory-side caches 24.

Furthermore, in some embodiments, a pre-fetch buffer 32 may providestorage locations organized into one or more buffer lines 33, forexample, to store an instance (e.g., copy) of data pre-fetched (e.g.,retrieved before demanded) from a memory array 28 implemented in one ormore memory devices 18. Accordingly, in some embodiments, a pre-fetchbuffer 32 may be communicatively coupled between a memory device 18 andthe processing circuitry 16 of the processing sub-system 12 and/or usedto implement a lower memory level compared to a memory array 28implemented in the memory device 18. Moreover, in some embodiments, datapre-fetched to a pre-fetch buffer 32 may subsequently be transferred toa cache 24. Thus, at least in such embodiments, the pre-fetch buffer 32may be communicatively coupled between the cache 24 and a memory device18 and/or used to implement a higher memory level compared to the cache24. In other embodiments, pre-fetched data may be directly stored into acache 24 and, thus, the pre-fetch buffer 32 may be obviated (e.g.,optional) and not included in the computing system 10.

In any case, to facilitate controlling data storage therein, the memorysub-system 14 may include one or more memory controllers (e.g., controllogic and/or control circuitry) 34, for example, communicatively coupledto the caches 24, the pre-fetch buffers 32, and/or the memory devices 18via a (e.g., instruction) communication bus 20. As in the depictedexample, in some embodiments, a memory controller 34 may be implementedusing multiple controllers (e.g., control logic and/or controlcircuitry), such as a cache controller 36, a pre-fetch controller 38, amain memory controller 40, and/or a memory-aware controller 42. In someembodiments, a cache controller 36 may be implemented and/or operated tocontrol data storage in one or more caches 24 and, thus, correspondingcache (e.g., lower) memory levels implemented in the memory sub-system14, for example, by identifying one or more candidate data blocks to beconsidered for storage (e.g., caching) in a cache memory level inaddition to being stored in a higher (e.g., memory array) memory level.Additionally, in some embodiments, a pre-fetch controller 38 may beimplemented and/or operated to facilitate predictively controlling datastorage in one or more caches 24 and/or in one or more pre-fetch buffers32 and, thus, corresponding lower memory levels implemented in thememory sub-system 14, for example, by identifying one or more candidatedata blocks to be considered for pre-fetching from a higher (e.g.,memory array) memory level into a dedicated lower (e.g., pre-fetchbuffer and/or cache) memory level.

Furthermore, in some embodiments, a main memory controller 40, such as aDRAM memory controller, may be implemented and/or operated to controldata storage in one or more memory arrays 28 implemented in the memorysub-system 14. In particular, in some embodiments, a (e.g., main) memorycontroller 34 may control operation of a memory array 28 in accordancewith an open page policy, for example, such that a currently activatedmemory page remains activated until a different (e.g., currentlydeactivated) memory page is targeted at which point the currentlyactivated memory page is deactivated and the different memory page issubsequently activated. In other words, at least in such embodiments, anactivation period of a memory page may span from the time the memorypage is initially activated (e.g., to fulfill a memory access request)until the time the memory page is subsequently deactivated (e.g., due toa different memory page being targeted).

Moreover, to facilitate improving operational efficiency of thecomputing system 10, in some embodiments, a memory-aware controller 42may selectively (e.g., predictively and/or adaptively) determine whetherto disable pre-fetching and/or caching of a candidate data block in adedicated lower (e.g., pre-fetch buffer and/or cache) memory level basedat least in part on a current state of one or more memory arrays 28implemented in the memory sub-system 14. As described above, in someembodiments, a main memory controller 40, such as a DRAM memorycontroller, may be implemented and/or operated to control data storagein a memory array 28. Thus, at least in such embodiments, the mainmemory controller 40 may determine a current state of the memory array28 and provide state information indicative of the current state of thememory array 28 to the memory-aware controller 42, thereby enabling thememory-aware controller 42 to selectively disabling caching and/orpre-fetching based at least in part on the current state of the memoryarray 28.

Additionally, as described above, in some embodiments, a memorysub-system 14 may include a processor-side portion and a memory-sideportion coupled via an external communication (e.g., memory) bus 20.Thus, in some embodiments, the memory sub-system 14 may include one ormore memory controllers 34 implemented on a memory-side of the externalcommunication bus 20, for example, as a memory-side memory controller34. Additionally or alternatively, the memory sub-system 14 may includeone or more memory controller 34 implemented on a processor-side of theexternal communication bus 20, for example, as a processor-side memorycontroller 34.

To help illustrate, an example of a processor-side of a computing system10, which includes a processing sub-system 12A and a processor-sidememory sub-system 14A, is shown in FIG. 2. As described above, in someembodiments, processing circuitry 16 of a processing sub-system 12 maybe implemented using one or more processor cores 44. For example, theprocessing circuitry 16A in the processing sub-system 12A may include atleast a first processor core 44A and an Nth processor core 44N. However,it should appreciated that the depicted example is merely intended to beillustrative and not limiting. For example, in other embodiments, aprocessing sub-system 12 may include a single processor core 44 or twoor more (e.g., four, eight, or sixteen) processor cores 44.

Additionally, as described above, in some embodiments, a processingsub-system 12 may include one or more registers 22 that provide storagelocations directly accessible to its processing circuitry 16. Forexample, the processing sub-system 12A may include at least a firstregister 22A, which may provide a storage location directly accessibleto the first processor core 44A, and an Nth register 22N, which mayprovide a storage location directly accessible to the Nth processor core44N. To facilitate increasing storage provided on the processor-side ofa memory bus 20A, as described above, a processor-side memory sub-system14A may include one or more processor-side caches 24A and/or aprocessor-side pre-fetch buffer 32A. In some embodiments, aprocessor-side cache 24A and/or the processor-side pre-fetch buffer 32Amay be implemented using volatile memory, such as static random-accessmemory (SRAM) and/or dynamic random-access memory (DRAM).

Furthermore, in some embodiments, the processor-side caches 24A may beorganized to implement one or more hierarchical (e.g., cache) memorylevels. For example, the processor-side caches 24A may include privateprocessor-side caches 46, which may be used to implement one or morelower (e.g., lowest) memory levels, and a shared processor-side cache48, which may be used to implement a higher (e.g., intermediate) memorylevel. In some embodiments, the data storage provided by the sharedprocessor-side cache 48 may be shared by at least the first processorcore 44A and the Nth processor core 44N. For example, the sharedprocessor-side cache 48 may include one or more level three (L3)processor-side caches 24A.

On the other hand, in some embodiments, the data storage provided by aprivate processor-side cache 46 may be dedicated to a correspondingprocessor core 44. For example, a first one or more privateprocessor-side caches 46A may include a level one (L1) processor-sidecache 24A dedicated to the first processor core 44A and a level two (L2)processor-side cache 24A cache dedicated to the first processor core44A. Additionally or alternatively, an Nth one or more privateprocessor-side caches 46N may include a level one (L1) processor-sidecache 24A dedicated to the Nth processor core 44N and a level two (L2)processor-side cache 24A dedicated to the Nth processor core 44N.

In any case, a processor-side memory controller 34A may generallycontrol data storage in the processor-side memory sub-system 14A. Inother words, in some embodiments, the processor-side memory controller34A may control data storage in the processor-side caches 24A, theprocessor-side pre-fetch buffer 32A, and/or the registers 22 implementedin the processing sub-system 12A. For example, the processor-side memorycontroller 34A may control data storage such that data demanded (e.g.,targeted) by the processing circuitry 16A is returned to one or more ofits registers 22. Thus, as in the depicted example, the processor-sidememory controller 34A may be communicatively coupled to the processingcircuitry 16A, the processor-side caches 24A, and/or the processor-sidepre-fetch buffer 32A via one or more processor-side internal buses 20B,for example, to enable the processor-side memory controller 34A todetermine data demanded (e.g., targeted) by the processing circuitry 16Aand/or to output control (e.g., command) signals that instruct (e.g.,cause) the processor-side memory sub-system 14A to adjust data storagetherein.

In particular, in some embodiments, the processor-side memory controller34A may identify a target data block, for example, which is demanded forstorage (e.g., writing) in the memory sub-system 14 by the processingsub-system 12A, demanded for retrieval (e.g., reading) from the memorysub-system 14 by the processing sub-system 12A, and/or expected (e.g.,predicted) to be demanded by the processing sub-system 12A during anupcoming control horizon (e.g., time period and/or one or more clockcycles). Additionally, the processor-side memory controller 34 maydetermine whether the target data block is currently stored in theprocessor-side memory sub-system 14A and, thus, whether the target datablock results in a processor-side miss. Moreover, as described above, insome embodiments, a processor-side memory sub-system 14A may providedata storage via one or more dedicated lower memory levels, for example,implemented using one or more processor-side caches 24 and/or aprocessor-side pre-fetch buffer 32A.

To help illustrate, an example of a dedicated lower (e.g., cache and/orpre-fetch buffer) memory level 50, which may be implemented in a memorysub-system 14, is shown in FIG. 3. In some embodiments, the dedicatedlower memory level 50 may be a cache memory level and, thus, implementedusing one or more caches 24. Additionally or alternatively, thededicated lower memory level 50 may be a pre-fetch buffer memory leveland, thus, implemented using one or more pre-fetch buffers 32.

In any case, as in the depicted example, the dedicated lower memorylevel 50 may provide storage locations organized into multiple lines 52(e.g., cache lines 30 and/or buffer lines 33)—namely a first line 52A,an Fth line 52F, and so on. Additionally, as in the depicted example,storage locations included in a line 52 of the dedicated lower memorylevel 50 may be allocated to enable storage of one or more data objects54, which each includes a data block 56 and associated metadata 58. Forexample, the first line 52 may be implemented with a line width thatenables storage of D valid data objects 54 including at least a firstdata object 54A and a Dth data object 54D. However, it should beappreciated that the depicted example is merely intended to beillustrative and not limiting. For example, in other embodiments, a line52 in a dedicated lower (e.g., cache and/or pre-fetch buffer) memorylevel 50 may be allocated with a line width that enables storage of asingle valid data object 54, a single valid data block 56, more than twovalid data objects 54, or more than two valid data blocks 56.

In any case, a data block 56 generally includes related data bits, forexample, which are expected to be processed (e.g., analyzed and/orinterpreted) together. Additionally, as in the depicted example,metadata 58 in a data object 54 may include one or more parametersassociated with a corresponding data block 56 in the data object 54. Forexample, the metadata 58 may include a tag parameter 60, a validityparameter 62, and/or a dirty parameter 64. However, it should again beappreciated that the depicted example is merely intended to beillustrative and not limiting. For example, in other embodiments,metadata 58 in a data object 54 may include one or more otherparameters, such as a transaction context parameter, associated with acorresponding data block 56 in the data object 54

In some embodiments, a validity parameter 62 included in metadata 58 ofa data object 54 may indicate the validity of a corresponding data block56. For example, the validity parameter 62 may include a validity bit,which indicates that the data block 56 is valid when set (e.g., “1” bitor high) and invalid when not set (e.g., “0” bit or low). Additionallyor alternatively, the validity parameter 62 may facilitate detectingwhether the data block 56 is valid and/or correcting the data block 56when invalid. For example, the validity parameter 62 may include one ormore error checking codes, such as an inversion bit, a poison bit, aparity bit, an error-detecting code (EDC), an error-correcting code(ECC), a Bose-Chaudhuri-Hocquenghem (BCH) code, a message authenticationcode (MAC), a cyclic redundancy check (CRC) code, or any combinationthereof.

Additionally, in some embodiments, a dirty parameter 64 included inmetadata 58 of a data object 54 may indicate whether a correspondingdata block 56 has been modified relative to a version of the data block56 stored in a higher memory level. For example, the dirty parameter 64may include a dirty bit, which indicates that the data block 56 has beenmodified when set (e.g., “1” bit or high) and that the data block 56 hasnot been modified when not set (e.g., “0” bit or low). In other words,at least in such embodiments, the dirty parameter 64 may be toggled whenthe data block 56 is initially modified relative to a version of thedata block 56 stored in a higher memory level.

Furthermore, in some embodiments, a tag parameter 60 included inmetadata 58 of a data object 54 may facilitate identifying acorresponding data block 56. In some embodiments, the value of anassociated tag parameter 60 may be indicative of the storage location ofthe data block 56 and/or a corresponding data object 54 in an addressspace and, thus, may be used to identify the data block 56 and/or thedata object 54. In other words, in some embodiments, the tag parameter60 may indicate a virtual memory address of the data block 56, aphysical memory address of the data block 56, or a value determinedbased on the virtual memory address and the physical memory address ofthe data block 56.

As such, in some embodiments, a memory sub-system 14 may search for atarget (e.g., requested and/or demanded) data block 56 in a dedicatedlower (e.g., cache and/or pre-fetch buffer) memory level 50 based atleast in part on the value of tag parameters 60 associated with validdata blocks 56 stored therein. For example, returning to theprocessor-side memory sub-system 14A of FIG. 2, when a data block 56 istargeted, the processor-side memory controller 34A may determine atarget value of a tag parameter 60 expected to be associated with thetarget data block 56. In particular, in some embodiments, theprocessor-side memory controller 34A may determine the target value ofthe tag parameter 60 based at least in part on a virtual memory addressand/or a physical memory address associated with the target data block

Based at least in part on the target value, the processor-side memorycontroller 34A may determine whether the target data block 56 misses adedicated lower memory level 50 implemented in the processor-side memorysub-system 14A by searching tag parameters 60 associated with valid datablocks 56 stored in the dedicated lower memory level 50. For example,the processor-side memory controller 34A may determine that the targetdata block 56 is stored in a dedicated lower memory level 50 when thetarget tag parameter 60 matches the tag parameter 60 associated with avalid data block 56 stored therein and, thus, results in a lower memorylevel (e.g., cache and/or pre-fetch buffer) hit. On the other hand, theprocessor-side memory controller 34A may determine that the target datablock 56 is not stored in the dedicated lower memory level 50 when thetarget tag parameter 60 does not match tag parameters 60 associated withany valid data block 56 stored therein and, thus, results in a lowermemory level (e.g., cache and/or pre-fetch buffer) miss.

When a data block 56 targeted for retrieval is not stored in any of theone or more dedicated lower memory levels 50 implemented in theprocessor-side memory sub-system 14A, the processor-side memorycontroller 34A may determine that the target data block 56 results in aprocessor-side miss. As described above, when a target data block 56results in a processor-side miss, the processor-side memory sub-system14A may output a read (e.g., pre-fetch or demand) memory access request,which requests return of the target data block 56, via the memory bus20A. Additionally or alternatively, the processor-side memory sub-system14A may output a write (e.g., demand) memory access request, whichrequests storage of a target data block 56, via the memory bus 20A.

As in the depicted example, in some embodiments, a processor-side memorysub-system 14A may include a request (e.g., command) queue 66, which maybe used to store memory access requests before output to the memory bus20A. In other words, at least in such embodiments, the processor-sidememory controller 34A may generate a memory access request and store thememory access request in the request queue 66. The processor-side memorysub-system 14A may then retrieve the memory access request from therequest queue 66 and output the memory access request to the memory bus20A. In fact, in some embodiments, the processor-side memory controller34A may generate memory access requests with varying fulfillmentpriorities, for example, such that demand memory access requests havehigher fulfillment priorities compared to pre-fetch memory accessrequests.

To enable communication via the memory bus 20A, as in the depictedexample, the processor-side memory sub-system 14A may include aprocessor-side bus interface 68 coupled between the memory bus 20A andthe one or more processor-side internal buses 20B. In some embodiments,the processor-side bus interface 68 may include one or more pins, whichmay each be coupled to corresponding wire of the memory bus 20A.Additionally, as described above, a memory-side of a memory sub-system14 may be couple to an opposite end of memory bus 20A.

To help illustrate, an example of a memory-side memory sub-system 14B,which is coupled to a memory bus 20A via a memory-side bus interface 70,is shown in FIG. 4. In some embodiments, the memory-side bus interface70 may include one or more pins, which may each be coupled tocorresponding wire of the memory bus 20A. Additionally, as in thedepicted example, the memory-side memory sub-system 14B may include oneor more memory-side caches 24B, a memory-side pre-fetch buffer 32B, andone or more memory devices 18A. However, it should be appreciated thatthe depicted example is merely intended to be illustrative and notlimiting. For example, in other embodiments, the memory-side caches 24and/or the memory-side pre-fetch buffer 31 may be optional and, thus,not included in a memory sub-system 14.

In any case, as described above, in some embodiments, a memorysub-system 14 may include one or more non-volatile memory devices 18and/or one or more volatile memory devices 18. Generally, a non-volatilememory device 18 may provide data storage using non-volatile memory. Forexample, a non-volatile memory device 18 may include a flash (e.g.,NAND) memory device, a phase-change memory (e.g., 3D XPointTM) device, aferroelectric random access memory (FeRAM) device, a solid state drive(SSD), a hard disk drive (HDD), or any combination thereof. On the otherhand, a volatile memory device 18 may generally provide data storageusing volatile memory. For example, a volatile memory device 18 mayinclude a dynamic random-access memory (DRAM) device, a staticrandom-access memory (SRAM) devices, or both.

Furthermore, in some embodiments, multiple memory devices 18 may beimplemented on a memory module, such as a dual in-line memory module(DIMM) or a single in-line memory module (SIMM). For example, a memorymodule may include a printed circuit board (PCB) and multiple memorydevices 18 disposed on a flat or planar (e.g., front or back) surface ofthe printed circuit board. Additionally, the memory devices 18 may becoupled to external pins formed along an (e.g., bottom) edge of theprinted circuit board via conductive traces formed on the printedcircuit board.

However, it should be appreciated that one or more of the memory devices18 may be implemented using other packing techniques. For example,memory devices 18 may be coupled to a (e.g., silicon) interposer toimplement a 2.5D configuration. Additionally or alternatively, memorydevices 18 may be stacked to implement a 3D configuration. Furthermore,in some embodiments, memory devices 18 may be implemented using organicpackaging techniques. In other words, in some embodiments, thetechniques described in the present disclosure may be implemented as anon-package solution.

In any case, as described above, different memory types generallyprovide varying tradeoffs that affect operational efficiency and/orimplementation associated cost, such as component count, manufacturingsteps, and/or physical footprint, of a memory sub-system 14 and, thus, acomputing system 10 in which the memory sub-system 14 is deployed. Forexample, non-volatile memory generally provides higher (e.g., greater)data storage density compared to volatile memory. Additionally,non-volatile memory cells, in contrast to volatile memory cells, maymaintain storage of data even while in an unpowered state. On the otherhand, volatile memory generally provides faster data access (e.g., readand/or write) speeds compared to non-volatile memory. In fact, staticrandom-access memory (SRAM) generally provide faster data access speedscompared to dynamic random-access memory (DRAM).

Thus, to facilitate improving data access speeds, in some embodiments, avolatile memory device 18 may be used to implement a lower (e.g.,smaller and faster) memory level compared to a non-volatile memorydevice 18, for example, which implements a highest (e.g., largest andslowest) memory level. As described above, in some embodiments, memorycells in one or more memory devices 18 may be organized into a memoryarray 28 to implement a corresponding memory level. For example,non-volatile memory cells in the memory-side memory sub-system 14B maybe organized into a storage memory array 72 corresponding with a storage(e.g., highest and/or non-volatile) memory level in the memorysub-system 14.

Additionally, in some embodiments, volatile memory cells may beorganized into one or more memory channel memory arrays 74, for example,each corresponding with a different memory (e.g., DRAM) channel. As anillustrative example, volatile memory cells in the memory-side memorysub-system 14B may be organized into a first memory channel memory array74A corresponding with a first memory channel. Additionally oralternatively, volatile memory cells in the memory-side memorysub-system 14B may be organized into an Mth memory channel memory array74M corresponding with an Mth memory channel.

An example of a memory array 28A, which may be implemented in one ormore memory devices 18, is shown in FIG. 5. As in the depicted example,the memory array 28A may be coupled to control circuitry—namely rowselect (e.g., decoder) circuitry 76 and column select (e.g., decoder)circuitry 78. Additionally, as in the depicted example, the memory array28A may include memory cells 80 coupled to the row select circuitry 76via word lines 82 formed in a first (e.g., horizontal) direction and toamplifier circuitry 84 via bit lines 86 formed in a second (e.g.,vertical) direction.

In some embodiments, each memory cell 80 may include a switchingcomponent, such as a metal-oxide-semiconductor field-effect transistor(MOSFET), and a storage component, such as a capacitor. For example, amemory cell 80 may be implemented such that its MOSFET is coupledbetween a bit line 86 and its storage capacitor and the gate of itsMOSFET is coupled to a word line 82. As such, in some embodiments, eachmemory cell 80 may be used to store one bit of data. For example, amemory cell 80 may indicate a 1-bit (e.g., logic high bit) when chargestored in the memory cell 80 results in a voltage greater than athreshold voltage. On the other hand, the memory cell 80 may indicate a0-bit (e.g., logic low bit) when charge stored in the memory cell 80results in a voltage less than the threshold voltage. In otherembodiments, a memory cell 80 may be implemented to store multiple bitsof data. For example, a memory cell 80 in Quad-Level Cell (QLC) NANDmemory may be implemented to store two bits of data.

In any case, as in the depicted example, the memory cells 80 may beorganized into one or more memory cell rows 88 (e.g., memory pages),which may each be identified by a corresponding row (e.g., page)address, and one or more memory cell columns 90, which may each beidentified by a corresponding column (e.g., physical memory) address. Insome embodiments, a memory cell row 88 may include each of the memorycells 80 coupled to a (e.g., one) word line 82. For example, a firstmemory cell row 88A (e.g., first memory page) may include each of thememory cells 80 coupled to a first word line 82A and an Lth memory cellrow 88L (e.g., Lth memory cell page) may include each of the memorycells 80 coupled to an Lth word line 82L.

As in the depicted example, organizing the memory array 28A in thismanner may enable memory cells 80 to be grouped into storage locations(e.g., memory addresses) each suitable for storage of a data block 56.For example, a first data block 56A may be stored at a first storagelocation including the memory cells 80 in the first memory cell row 88Aand a first memory cell column 90A, a second data block 56B may bestored at a second storage location including the memory cells 80 in theLth memory cell row 88L and a second memory cell column 90B, and a Wthdata block 56W may be stored at a Wth storage location including thememory cells 80 in the first memory cell row 88A and the Kth memory cellcolumn 90K. In other embodiments, the memory cells 80 in a memory array28 to be grouped into storage locations each suitable for storage of adata object 54, which includes a data block 56 and correspondingmetadata 58.

In any case, as described above, row select circuitry 76 may beconnected to memory cell row 88 (e.g., memory pages) of the memory array28A via corresponding word lines 82. To enable reading from and/orwriting to storage locations in a specific memory page, the row selectcircuitry 76 may activate the memory cells 80 included in the memorypage. For example, in some embodiments, the row select circuitry 76 maypre-charge a memory page (e.g., memory cell row 88) by outputting apre-charge control signal via a corresponding word line 82 and,subsequently, activate the memory page by outputting an activation(e.g., logic high) control signal via the corresponding word line 82,which causes the switching component of each memory cell 80 in thememory page to electrically couple (e.g., connect) its storage componentto a corresponding bit line 86.

Moreover, as in the depicted example, column select circuitry 78 may becoupled to memory cell columns 90 via corresponding amplifier circuitry84. In other words, the column select circuitry 78 may be coupled to thefirst memory cell column 90A via first bit lines 86A and first amplifiercircuitry 84A, the second memory cell column 90B via second bit lines86B and second amplifier circuitry 84B, and the Kth memory cell column90K via Kth bit lines 86K and Kth amplifier circuitry 84K. In someembodiments, amplifier circuitry 84 may include a driver amplifier thatfacilitates storing (e.g., writing) data into the memory cells 80 and/ora sense amplifier that facilitates outputting (e.g., reading) data fromthe memory cells 80.

Additionally, in some embodiments, the column select circuitry 78 mayselectively enable reading from and/or writing to a storage location inan activated memory page, for example, by outputting a column select(e.g., logic high) control signal to corresponding amplifier circuitry84. In other words, to read data (e.g., first data block 56A) fromand/or to write data to a storage location in the first memory cellcolumn 90A, the column select circuitry 78 may output a column selectcontrol signal to the first amplifier circuitry 84A. Similarly, to readdata (e.g., second data block 56B) from and/or to write data to astorage location in the second memory cell column 90B, the column selectcircuitry 78 may output a column select control signal to the secondamplifier circuitry 84B. Furthermore, to read data (e.g., Wth data block56) from and/or to write data to a storage location in the Kth memorycell column 90K, the column select circuitry 78 may output a columnselect control signal to the Kth amplifier circuitry 84K. In thismanner, memory cells 80 in one or more memory devices 18 may beorganized to implement a memory array 28 in a memory sub-system 14.

Returning to the memory-side memory sub-system 14B of FIG. 4, inaddition to memory arrays 28 implemented in the memory devices 18, thememory-side memory sub-system 14B may include one or more memory-sidecaches 24B and/or a memory-side pre-fetch buffer 32B, for example, whichis not directly accessible to a processor-side (e.g., host) of thecomputing system 10 via the memory bus 20A. As described above, a cache24 and/or a pre-fetch buffer 32 may be implemented in a memorysub-system 14 to provide a dedicated lower (e.g., cache and/or pre-fetchbuffer) memory level 50 compared to a memory array 28 implemented in thememory sub-system 14. In other words, in some embodiments, a memory-sidecache 24B and/or a memory-side pre-fetch buffer 32B may be implementedto, on average, provide faster data access speed compared to a memoryarray 28.

Thus, in some embodiments, a memory-side cache 24B and/or a memory-sidepre-fetch buffer 32B may also be implemented using volatile memory. Forexample, the memory-side cache 24B and/or the memory-side pre-fetchbuffer 32B may be implemented with static random-access memory (SRAM)while a volatile memory array 28 is implemented with dynamicrandom-access memory (DRAM). Additionally or alternatively, thememory-side cache 24B and/or the memory-side pre-fetch buffer 32B may beimplemented using the same memory type (e.g., DRAM) as a volatile memoryarray 28. In fact, in some embodiments, one or more memory-side caches24 may be implemented in a volatile memory device 18.

Moreover, in some embodiments, the memory-side caches 24B may behierarchically organized. For example, the memory-side caches 24B mayinclude one or more memory channel caches 92 and a shared memory-sidecache 94. In some embodiments, a memory channel cache 92 may bededicated to a corresponding memory channel while the shared memory-sidecache 94 may be shared between multiple memory channels. For example, afirst one or more memory channel caches 92A may be dedicated to a firstmemory channel implemented by the first memory channel memory array 74Awhile an Mth one or more memory channel caches 92M may be dedicated toan Mth memory channel implemented by the Mth memory channel memory array74M. On the other hand, in some embodiments, the shared memory-sidecache 94 may be shared at least by the first memory channel and the Mthmemory channel. Thus, in some embodiments, the shared memory-side cache94 may be implemented to provide a lower (e.g., lowest) memory level inthe memory-side memory sub-system 14B compared to the memory channelcaches 92. In other embodiments, the shared memory-side cache 94 may beobviated and, thus, not included in the memory-side memory sub-system14B.

In any case, a memory-side memory controller 34B may generally controldata storage in the memory-side memory sub-system 14B. For example, thememory-side memory controller 34B may control whether data is stored ina memory-side cache 24B, the memory-side pre-fetch buffer 32B, avolatile memory device 18, a non-volatile memory device 18, or anycombination thereof. In other words, in some embodiments, thememory-side memory controller 34B may control whether the data is storedin a (e.g., lower intermediate) memory level implemented in thememory-side cache 24, a (e.g., higher intermediate) memory levelimplemented in a volatile memory device 18, a (e.g., highest) memorylevel implemented in a non-volatile memory device 18, or any combinationthereof. Thus, as in the depicted example, the memory-side memorycontroller 34B may be communicatively coupled to the memory-side caches24B, the memory-side pre-fetch buffer 32B, and/or the memory devices 18Avia one or more memory-side internal buses 20C, for example, to enablethe memory-side memory controller 34B to search for target data and/orto output control (e.g., command) signals that instruct (e.g., cause)the memory-side memory sub-system 14B to adjust data storage therein.

As will be described in more detail below, to facilitate improvingcomputing system operational efficiency, in some embodiments, a (e.g.,memory-side and/or processor-side) memory controller 34 may control datastorage at least in part by selectively disabling pre-fetching and/orcaching in a dedicated lower (e.g., cache and/or pre-fetch buffer)memory level 50. For example, the memory controller 34 may selectivelydisable pre-fetching of a candidate data block 56, which is targeted bya pre-fetch (e.g., read) memory access request, from a memory array 28(e.g., higher memory level) to a dedicated lower memory level 50 basedat least in part on a current state of the memory array 28. Additionallyor alternatively, the memory controller 34 may selectively disablecaching (e.g., enable cache bypass) of a candidate data block 56, whichis targeted (e.g., demanded) for storage in a memory array 28 by a write(e.g., demand) memory access request and/or targeted (e.g., demanded)for retrieval from the memory array 28 by a read (e.g., demand) memoryaccess request, based at least in part on a current state of the memoryarray 28. In some embodiments, the current state of a memory array 28may be indicated via corresponding memory array state information 96.

To help illustrate, an example of memory array state information 96A,which may be determined and/or utilized by a (e.g., processor-side ormemory-side) memory controller 34, is shown in FIG. 6. As in thedepicted example, the memory array state information 96A may include oneor more entries (e.g., rows) 98. Additionally, as in the depictedexample, each entry 98 may include a page identifier field (e.g.,column) 100, an activation state field 102, and a page hit confidencefield 104. However, it should be appreciated that the depicted exampleis merely intended to be illustrative and not limiting. For example, inother embodiments, the memory array state information 96 mayadditionally or alternatively include other types of data, fields,and/or information.

With regard to the depicted example, each entry 98 in the memory arraystate information 96A may identify an associated memory page (e.g.,memory cell row 88) in its page identifier field 100. For example, afirst page identifier parameter in a first entry 98A may indicate thatthe first entry 98A is associated with a first memory page in a memoryarray 28 corresponding with the memory array state information 96A.Similarly, a second page identifier parameter in a second entry 98B mayindicate that the second entry 98B is associated with a second memorypage in the memory array 28 corresponding with the memory array stateinformation 96A.

In some embodiments, a page identifier parameter included in an entry 98of the memory array state information 96A may identify an associatedmemory page (e.g., memory cell row 88) via a page (e.g., row) address ofthe memory page. For example, the first page identifier parameter may bea first page address of the first memory page, thereby indicating thatthe portion of the memory array state information 96A in the first entry98A is associated with the first memory page. Similarly, the second pageidentifier parameter may be a second page address of the second memorypage, thereby indicating that the portion of the memory array stateinformation 96A in the second entry 98B is associated with the secondmemory page.

In other words, at least in such embodiments, memory array stateinformation 96 associated with a memory array 28 may include memory pagestate information associated with one or more memory pages (e.g., memorycell rows 88) in the memory array 28. That is, continuing with the aboveexample, the portion of the memory array state information 96A in thefirst entry 98A may be first memory page state information indicative ofa current state of the first memory page. Similarly, the portion of thememory array state information 96A in the second entry 98B may be secondmemory page state information indicative of a current state of thesecond memory page. At least in some embodiments, organizing memoryarray state information 96 in this manner may facilitate determining(e.g., retrieving) memory page state information associated with amemory page in response to the memory page being targeted by a memoryaccess request and/or updating the memory page state informationassociated with the memory page in response to a different memory pagebeing targeted by a subsequent memory access request.

Additionally, as in the depicted example, each entry 98 (e.g., memorypage state information) in the memory array state information 96A mayassociate a corresponding memory page (e.g., memory cell row 88) with anactivation state parameter indicated in the activation state field 102and a page hit confidence parameter indicated in the page hit confidencefield 104. In other words, in some embodiments, the first memory pagestate information (e.g., first entry 98A) may include a first activationstate parameter, which indicates a current activation state of the firstmemory page, and a first page hit confidence parameter, which isindicative of the confidence that a subsequent (e.g., next successive)memory access request will target the first memory page. Similarly, thesecond memory page state information (e.g., second entry 98B) mayinclude a second activation state parameter, which indicates a currentactivation state of the second memory page, and a second page hitconfidence parameter, which is indicative of the confidence that asubsequent (e.g., next successive) memory access request will target thesecond memory page.

In some embodiments, an activation state parameter may indicate thecurrent activation state of an associated memory page via an activationstate bit. For example, the activation state parameter may indicate thatthe associated memory page is currently in its activated state when theactivation state bit is set (e.g., “1” bit or high). On the other hand,the activation state parameter may indicate that the associated memorypage is currently in its deactivated state when the activation state bitis not set (e.g., “0” bit or low).

Since memory (e.g., data) accesses are often somewhat cyclical (e.g.,repetitive), to indicate confidence that a subsequent memory accessrequest will target an associated memory page, in some embodiments, thevalue of a page hit confidence parameter may be set based at least inpart on the number of times the memory page was successively targetedduring one or more previous activation periods. For example, the valueof the first next confidence parameter may be set based at least in parton the number of times the first memory page was successively targetedduring one or more previous activation periods of the first memory page.Similarly, the value of the second next confidence parameter may be setbased at least in part on the number of times the second memory page wassuccessively targeted during one or more previous activation periods ofthe second memory page.

To facilitate tracking the number of times a memory page (e.g., memorycell row 88) is targeted (e.g., accessed), as in the example depicted inFIG. 4, a memory sub-system 14 may include a counter 106. In particular,in some embodiments, the memory-side memory controller 34B may updatethe value of the counter 106 each time a memory page is targeted by amemory access request. As an illustrative non-limiting example, in someembodiments, the memory-side memory controller 34A may load the value ofa counter 106 associated with a memory page when the memory page isinitially activated to fulfill a memory access request. Additionally,while the memory page remains activated during a current activationperiod, the memory-side memory controller 34 may increment the value ofthe associated counter 106 each time the memory page is subsequentlytargeted by a successive memory access request. On the other hand, whena subsequent memory access request targets a different (e.g., currentlydeactivated) memory page, the memory-side memory controller maydecrement the value of the associated counter 106 and update a page hitconfidence parameter included in associated state informationaccordingly.

As another illustrative non-limiting example, the memory-side memorycontroller 34B may reset the value of a counter 106 (e.g., to zero) whena memory page is initially activated in response to being targeted by afirst memory access request. Additionally, while the memory page remainsactivated during a current activation period, the memory-side memorycontroller 34B may increment the value of the counter 106 each time thememory page is subsequently targeted by a successive memory accessrequest. For example, when a second memory access request to befulfilled directly after the first memory access request also targetsthe memory page, the memory-side memory controller 34B may increment thevalue of the counter 106 from a value of zero to a value of one and soon.

On the other hand, to facilitate indicating the confidence that asubsequent memory access request will target the memory page during asubsequent activation period, the memory-side memory controller 34B mayupdate the value of a next confidence parameter associated with thememory page based at least in part on the value the counter 106resulting at the end of its current activation period. In other words,in response to a memory page being transitioned from its activated stateto its deactivated state (e.g., at end of activation period), thememory-side memory controller 34B may update the value of a nextconfidence parameter included in associated state information, forexample, in addition to updating the value of an activation stateparameter included in the associated state information to indicate thatthe memory page is now in its deactivated state. Moreover, as describedabove, in response to a memory page being transitioned from itsdeactivated state to its activated state (e.g., at beginning ofactivation period), the memory-side memory controller 34B may update thevalue of an associated activation state parameter included in associatedstate information to indicate that the memory page is now in itsactivated state.

To help further illustrate, an example of a process 107 for operating amemory array 28 and responsively updating corresponding stateinformation is described in FIG. 7. Generally, the process 107 includesactivating a memory page in a memory array (process block 109), updatingan activation state parameter to identify the memory page as currentlyactivated (process block 111), resetting a counter value (process block113), providing access to a storage location in the memory page (processblock 115), determining whether a different page is targeted next(decision block 117), and incrementing the counter value when adifferent memory page is not targeted next (process block 119).Additionally, when a different memory page is targeted next, the process107 includes deactivating the memory page (process block 121), updatingthe activation state parameter to identify the memory page as currentlydeactivated (process block 123), and updating a next confidenceparameter associated with the memory page based on the counter value(process block 125).

Although described in a particular order, which represents a particularembodiment, it should be noted that the process 107 may be performed inany suitable order. Additionally, embodiments of the process 107 mayomit process blocks and/or include additional process blocks. Moreover,in some embodiments, the process 107 may be implemented at least in partby executing instructions stored in a tangible, non-transitory,computer-readable medium, such as memory implemented in a memorycontroller 34, using processing circuitry, such as a processorimplemented in the memory controller 34.

Accordingly, in some embodiments, a (e.g., main and/or memory-side)memory controller 34 may instruct a (e.g., memory-side) memorysub-system 14 to activate a memory page (e.g., memory cell row 88) in amemory array 28, for example, due to memory page being targeted while inits deactivated state (process block 109). As will be described in moredetail below, in some embodiments, a memory access request may includeone or more access parameters indicative of a storage location for whichaccess is being requested. For example, the one or more accessparameters be indicative of a row (e.g., page) address and columnaddress pairing that identifies the target storage location.

Additionally, to facilitate controlling activation state of memory pages(e.g., memory cells row 88) in a memory array 28, as described above,row select (e.g., decoder) circuitry 76 may be coupled to each of thememory pages via a corresponding word line 82. For example, the rowselect circuitry 76 may pre-charge a memory page by outputting apre-charge control signal via a corresponding word line 82 and,subsequently, activate the memory page by outputting, via thecorresponding word line 82, an activation (e.g., logic high) controlsignal that causes the switching component of each memory cell 80 in thememory page to electrically couple (e.g., connect) its storage componentto a corresponding bit line 86. As such, in some embodiments, the memorycontroller 34 may instruct the row select circuitry 76 to pre-charge andactivate a memory page (e.g., memory cell row 88) including a storagelocation (e.g., memory address) targeted by a memory access request, forexample, using a page (e.g., row) address determined based on one ormore access parameters included in the memory access request.

Furthermore, as will be described in more detail below, in response toreceipt of a memory access request, the memory controller 34 maydetermine state information (e.g., memory array state information 96and/or memory page state information) indicative of a current state of amemory page including a storage location targeted by the memory accessrequest. For example, using a page (e.g., row) address determined basedon one or more access parameters included in the memory access request,the memory controller may retrieve state information associated with thetarget memory page from a cache 24 (e.g., into one of more of itsregister). As described above, in some embodiments, state informationassociated with a memory page may include a page hit confidenceparameter, which is indicative of the confidence that a subsequent(e.g., next successive) memory access request will target the memorypage, and an activation state parameter, which indicates a currentactivation state of the memory page.

Accordingly, when a target memory page is initially activated (e.g., atbeginning of activation period), the memory controller 34 may update anactivation state parameter associated with the target memory page toindicate that the memory page is now in its activated state (processblock 111). As described above, in some embodiments, an activation stateparameter may indicate the current activation state of an associatedmemory page via an activation state bit. For example, the activationstate bit may indicate that an associated memory page is currently inits activated state when set (e.g., “1” bit or high) and that theassociated memory page is currently in its activated state when not set(e.g., “0” bit or low). Thus, at least in such embodiments, when amemory page is transitioned between its deactivated state and itsactivated state, the memory controller 34 may update associated memorypage state information at least in part by toggling a correspondingactivation state bit.

Additionally, when the target memory page is initially activated (e.g.,at beginning of activation period), the memory controller 34 may resetthe value of a counter 106 (process block 113). As described above, insome embodiments, the memory controller 34 may use the counter 106 tofacilitate tracking the number of times a memory page is targeted duringan activation period. Thus, at least in such embodiments, the memorycontroller 34 resets the counter 106 to a value of zero at the beginningof the activation period.

Furthermore, to facilitate fulfilling a memory access request, thememory controller 34 may instruct the memory sub-system 14 to provideaccess to a storage location in a memory page targeted by the memoryaccess request (process block 115). As described above, in someembodiments, a memory sub-system 14 may provide access to a storagelocation in a memory array 28 to enable writing (e.g., storing) data tothe storage location and/or to enable reading (e.g., retrieving) datafrom the storage location. Additionally, as described above, tofacilitate writing to and/or reading from storage locations in a memoryarray 28, in some embodiments, amplifier circuitry 84 may be coupled toeach of the storage locations via corresponding bit lines 86. Forexample, first amplifier circuitry 84A may be coupled to each storagelocation in a first memory cell column 90A of the memory array 28 viafirst bit lines 86A, second amplifier circuitry 84B may be coupled toeach storage location in a second memory cell column 90B via second bitlines 86B, and so on.

Moreover, to facilitate selectively accessing different storagelocations in an activated memory page (e.g., memory cell row 88), asdescribed above, column select (e.g., decoder) circuitry 78 may becoupled to amplifier circuitry 84 of a memory array 28. For example, toprovide access to a storage location included in the first memory cellcolumn 90A, the column select circuitry 78 may output a column select(e.g., logic high) control signal to the first amplifier circuitry 84A.Similarly, to provide access to a storage location included in thesecond memory cell column 90B, the column select circuitry 78 may outputthe column select control signal to the second amplifier circuitry 84B.

In other words, to facilitate providing access to a storage locationtargeted by a memory access request, the memory controller 34 mayinstruct the column select circuitry 78 to output a column selectcontrol signal to amplifier circuitry 84 coupled to a correspondingmemory cell column 90, for example, using a column address determinedbased on one or more access parameters included in the memory accessrequest. Additionally, as described above, to facilitate providingaccess to a storage location targeted by a memory access request, thememory controller 34 may instruct the row select circuitry 76 to outputan activation control signal to a memory page (e.g., memory cell row 88)including the target storage location. In other words, in someembodiments, a memory controller 34 may operate in this manner tofacilitate fulfilling a memory access request, for example, by enablingdata to be read (e.g., retrieved) from and/or written (e.g., stored) toa storage location targeted by the memory access request.

After fulfilling a memory access request, the memory controller 34 maydetermine whether a next subsequent (e.g., successive) memory accessrequest to be fulfilled by the memory sub-system 14 targets a differentmemory page (decision block 117). In other words, the memory controller34 may determine whether the memory page including a storage locationtargeted by the next subsequent memory access request matches a memorypage including a storage location targeted by a directly previous memoryaccess request. When the next subsequent memory access request targetsthe same memory page as the directly previous memory access request, thememory controller 34 may increment the value of the counter 106 (processblock 119). For example, the memory controller 34 may increment thecounter 106 from a value of zero to a value of one when the nextsubsequent memory access request targets a currently activated memorypage, from a value of one to a value of two when a memory access requestto be fulfilled directly after the next subsequent memory access requestalso targets the currently activated memory page, and so on.

On the other hand, when the next subsequent memory access requesttargets a different memory page compared to a directly previous memoryaccess request, the memory controller 34 may instruct the memorysub-system 14 to deactivate the memory page targeted by the directlyprevious memory access request, for example, in addition to activatingthe different memory page targeted by the next subsequent memory accessrequest (process block 121). To deactivate a currently activated memorypage, in some embodiments, the memory controller 34 may instruct the rowselect circuitry 76 to cease supply of an activation (e.g., logic high)control signal to a corresponding word line 82. Additionally oralternatively, the memory controller 34 may instruct the row selectcircuitry 76 to supply of a deactivation (e.g., logic low) controlsignal to the corresponding word line 82.

In any case, to facilitate indicating a current state of a memory page,as described above, associated state information may be updated inresponse to the memory page being transitioned from its activated stateto its deactivated state. In particular, when the target memory page issubsequently deactivated (e.g., at end of activation period), the memorycontroller 34 may update the activation state parameter included in thestate information associated with the memory page to indicate that thememory page is now is its deactivated state (process block 123). Forexample, the memory controller 34 may update the associated memory pagestate information at least in part by toggling a correspondingactivation state bit.

Additionally, when a memory page is subsequently deactivated (e.g., atend of activation period), the memory controller 34 may update the valueof the page hit confidence parameter included in associated stateinformation based at least in part on the value of the counter 106resulting at the end of the activation period. In some embodiments, thememory controller 34 may update the value of a next confidence parameterassociated with a memory page independent of its previous state (e.g.,next confidence parameter). For example, in such embodiments, the memorycontroller 34 may update the value of the page hit confidence parameterassociated with the memory page by overwriting a previous value of thepage hit confidence parameter (e.g., determined at beginning ofactivation period) with the value of the counter 106 resulting at theend of the activation period.

To facilitate improving accuracy of a next target confidence predictionmade based on a page hit confidence parameter associated with a memorypage, in other embodiments, the memory controller 34 may update thevalue of the next confidence parameter based at least in part on or moreprevious states of the memory page. For example, at the end of anactivation period, in such embodiments, the memory-side memorycontroller 34B may update the page hit confidence parameter associatedwith the memory page based on an (e.g., weighted) average of the valueof the counter 106 resulting at the end of the activation period and thevalue of the page hit confidence parameter associated with the memorypage at the beginning of the activation period, thereby producing amoving average. Additionally or alternatively, in such embodiments, thememory controller 34 may update the page hit confidence parameter byaveraging the values of the counter 106 resulting at the end of multipleactivation periods of the memory page, for example, such that values ofthe counter 106 resulting at the end of more recent activation periodsare weighted more heavily than counter values results at the end ofolder activation periods.

In this manner, a memory sub-system 14 may operate to provide access toone or more storage locations in a memory array 28 and update memoryarray state information 96 associated with the memory array 28accordingly. As described above, a memory-side memory sub-system 14B mayprovide memory access to a processor-side of a computing system 10 inresponse to receipt of a memory access request via the memory bus 20A.For example, in response to receipt of a write (e.g., demand) memoryaccess request, the memory-side memory controller 34B may instruct thememory-side memory sub-system 14B to store an instance of a data block56 targeted (e.g., demanded) for storage by the write memory accessrequest in one or more hierarchical memory levels implemented in thememory-side memory sub-system 14B. Additionally or alternatively, inresponse to receipt of a read (e.g., pre-fetch or demand) memory accessrequest, the memory-side memory controller 34B may identify a data block56 targeted for retrieval by the read memory access request and instructthe memory-side memory sub-system 14B to return the target data block 56to the processor-side of the computing system 10 (e.g., processor-sidememory sub-system 14A and/or processing sub-system 12) via the memorybus 20A.

To help further illustrate, an example of a process 108 for operating aprocessor-side of a computing system 10 is described in FIG. 8.Generally, the process 108 includes determining a data block demanded byprocessing circuitry (process block 110), determining whether thedemanded data block results in a processor-side miss (decision block112), and outputting the demanded data block from a processor-sidememory level to the processing circuitry when the demanded data blockdoes not result in a processor-side miss (process block 114).Additionally, when the demanded data block results in a processor-sidemiss, the process 108 includes requesting the demanded data block from amemory-side (process block 116), determining whether the demanded datablock has been returned from the memory-side (decision block 118), anddetermining whether a processor-side cache bypass has been enabled(decision block 120). Furthermore, after the demanded data block isreturned from the memory-side, the process 108 includes supplying thedemanded data block directly to the processing circuitry when theprocessor-side cache bypass has been enables (process block 122) andstoring the demanded data block in a processor-side cache when theprocessor-side cache bypass has not been enabled (process block 124).

Although described in a particular order, which represents a particularembodiment, it should be noted that the process 108 may be performed inany suitable order. Additionally, embodiments of the process 108 mayomit process blocks and/or include additional process blocks. Moreover,in some embodiments, the process 108 may be implemented at least in partby executing instructions stored in a tangible, non-transitory,computer-readable medium, such as memory implemented in a memorycontroller 34, using processing circuitry, such as a processorimplemented in the memory controller 34.

Accordingly, in some embodiments, a processor-side memory controller 34Ain a processor-side memory sub-system 14A of a computing system 10 maydetermine a data block 56 demanded (e.g., targeted) by processingcircuitry 16 in a processing sub-system 12 of the computing system 10(process block 110). In some embodiments, processing circuitry 16 mayidentify a demanded data block 56 using a corresponding (e.g., target)virtual memory address. Based at least in part on the virtual memoryaddress, in some embodiments, the processor-side memory controller 34Amay determine a corresponding (e.g., target) physical memory address,which indicates storage location of the demanded data block 56 in thecomputing system 10.

Additionally, the processor-side memory controller 34A may determinewhether the demanded data block 56 results in a processor-side miss(decision block 112). In some embodiments, a memory controller 34 maydetermine whether a data block 56 is stored in a dedicated lower memorylevel 50 based at least in part on a virtual memory address and/or aphysical memory address associated with the data block 56. For example,based at least in part on its virtual memory address and physical memoryaddress, the memory controller 34 may determine a target value of a tagparameter 60 (e.g., metadata 58) expected to be associated with thedemanded data block 56.

By searching valid lines 52 included in each processor-side dedicatedlower (e.g., cache and/or pre-fetch buffer) memory level 50 based on thetarget tag parameter value, the processor-side memory controller 34A maydetermine whether the demanded data block 56 results in a processor-sidemiss. For example, when the target tag parameter value does not matchthe tag parameter values included in any of the processor-side dedicatedlower memory levels 50, the processor-side memory controller 34A maydetermine that the demanded data block 56 results in a processor-sidemiss. On the other hand, when the target tag parameter value is includedin one or more lines 52 of the processor-side dedicated lower memorylevels 50, the processor-side memory controller 34A may determine thatthe demanded data block 56 results in a processor-side hit and, thus,does not result in a processor-side miss.

When the demanded data block 56 does not result in a processor-sidemiss, the processor-side memory controller 34A may instruct aprocessor-side dedicated lower (e.g., cache and/or pre-fetch buffer)memory level 50 to supply the demanded data block 56 to the processingcircuitry 16, for example, to facilitate improving data retrieval speedand, thus, operational efficiency of the computing system 10 (processblock 114). In some embodiments, a processor-side dedicated lower memorylevel 50 may output a line 52 with a valid tag parameter value thatmatches the target tag parameter value expected to be associated withthe demanded data block 56. When stored in a higher memory level (e.g.,shared processor-side cache 48), in some embodiments, the demanded datablock 56 may pass through one or more lower memory levels (e.g., privateprocessor-side caches 46) in the processing sub-system 12 beforereaching the processing circuitry 16.

On the other hand, when it results in a processor-side miss, theprocessor-side memory controller 34A may request return of the demandeddata block 56 from a memory-side of the computing system 10 (processblock 116). As described above, to request return of a demanded datablock 56, in some embodiments, a processor-side memory controller 34Amay generate a read (e.g., demand) memory access request, which may bestored in a request queue 66 before output to a memory-side of thecomputing system 10 via a memory (e.g., external communication) bus 20A.Additionally, as described above, in some embodiments, a processor-sidebus interface 68 may be coupled between the memory bus 20A and one ormore processor-side internal buses 20B. Thus, at least in suchembodiments, the processor-side bus interface 68 may receive a memoryaccess request via one or more processor-side internal buses 20B androute the memory access request to the memory bus 20A.

Moreover, as described above, a read memory access request may includeone or more read access parameters, which may be used by the memory-sideof the computing system 10 to retrieve a data block 56 targeted (e.g.,demanded) by the read memory access request. For example, the one ormore read access parameters may include a virtual memory address used bythe processing circuitry 16 to identify the target data block 56, aphysical memory address (e.g., row address and column address pairing)at which the target data block 56 is expected to be stored in amemory-side of the computing system 10, size (e.g., bit depth) of thetarget data block 56, and/or a read enable indicator (e.g., bit). Assuch, based at least in part on the value of one or more read accessparameters indicated in a read (e.g., demand) memory access request, amemory-side memory sub-system 14B may identify and return a demandeddata block 56 targeted by the read memory access request.

To help illustrate, an example of a process 126 for operating amemory-side memory sub-system 14B is described in FIG. 9. Generally, theprocess 126 includes receiving a read memory access request from aprocessor-side (process block 128), determining a data block demanded bythe read memory access request (process block 130), determining whetherthe demanded data block results in a memory-side lower memory level miss(decision block 132), and outputting the demanded data block from amemory-side lower memory level to the processor-side when the demandeddata block does not result in a memory-side lower memory level miss(process block 134). Additionally, when the demanded data block resultsin a memory-side lower memory level miss, the process 126 includesdetermining whether a memory-side cache bypass has been enabled(decision block 136), outputting the demanded data block from a memoryarray directly to the processor-side when the memory-side cache bypassis enabled (process block 138), and storing the demanded data blockretrieved from the memory array in a memory-side cache when thememory-side cache bypass has not been enabled (process block 140).

Although described in a particular order, which represents a particularembodiment, it should be noted that the process 126 may be performed inany suitable order. Additionally, embodiments of the process 126 mayomit process blocks and/or include additional process blocks. Moreover,in some embodiments, the process 126 may be implemented at least in partby executing instructions stored in a tangible, non-transitory,computer-readable medium, such as memory implemented in a memorycontroller 34, using processing circuitry, such as a processorimplemented in the memory controller 34.

Accordingly, in some embodiments, a memory-side memory controller 34Bimplemented in a memory-side memory sub-system 14B of a computing system10 may receive a read (e.g., demand) memory access request output from aprocessor-side of the computing system 10 (process block 128). Asdescribed above, in some embodiments, a processor-side memory sub-system14A may output a memory access request via a memory bus 20A and amemory-side bus interface 70 may be coupled between the memory bus 20Aand one or more memory-side internal buses 20C. Thus, at least in suchembodiments, the memory-side bus interface 70 may receive a memoryaccess request from the memory bus 20A and route the memory accessrequest to the memory-side memory controller 34B via one or morememory-side internal buses 20C.

Additionally, as described above, in some embodiments, a memory accessrequest may include one or more access parameters to be used by a memorysub-system 14 to provide memory (e.g., data) access. For example, theone or more access parameters may include a virtual memory address usedby processing circuitry 16 to identify a data block 56 demanded by thememory access request and/or a physical memory address (e.g., rowaddress and column address pairing) at which the data block 56 demandedby the memory access request is expected to be stored in the memorysub-system 14. Accordingly, in such embodiments, the memory-side memorycontroller 34B may determine (e.g., identify) a data block 56 demandedfor retrieval by the read memory access request and/or a demanded memoryaddress associated with the data block 56 based at least in part on oneor more read access parameters included in the read memory accessrequest (process block 130).

Furthermore, the memory-side memory controller 34B may determine whetherthe demanded data block 56 results in a memory-side lower memory levelmiss (decision block 132). As described above, in some embodiments, amemory controller 34 may determine whether a data block 56 is stored ina dedicated lower (e.g., cache and/or pre-fetch buffer) memory level 50based at least in part on a virtual memory address and/or a physicalmemory address associated with the data block 56. For example, based atleast in part on its virtual memory address and physical memory address,the memory controller 34 may determine a target value of a tag parameter60 (e.g., metadata 58) expected to be associated with the demanded datablock 56.

By searching valid lines 52 included in each memory-side dedicated lower(e.g., cache and/or pre-fetch buffer) memory level 50 based on thetarget tag parameter value, the memory-side memory controller 34B maydetermine whether the demanded data block 56 results in a memory-sidelower memory level miss. For example, when the target tag parametervalue does not match the tag parameter values included in any of thememory-side dedicated lower memory levels 50, the memory-side memorycontroller 34B may determine that the demanded data block 56 results ina memory-side lower memory level miss. On the other hand, when thedemanded tag parameter value is included in one or more valid lines 52of the memory-side dedicated lower memory levels 50, the memory-sidememory controller 34B may determine that the demanded data block 56results in a memory-side lower memory level hit and, thus, does notresult in a memory-side lower memory level miss.

When the demanded data block 56 does not result in a memory-side lowermemory level miss, the memory-side memory controller 34B may instruct amemory-side dedicated lower (e.g., cache and/or pre-fetch buffer) memorylevel 50 to output the demanded data block 56 to a processor-side of thecomputing system 10 via the memory bus 20A, for example, to facilitateimproving data retrieval speed and, thus, operational efficiency of thecomputing system 10 (process block 134). In some embodiments, amemory-side dedicated lower memory level 50 may output a line 52 with atag parameter value that matches the target tag parameter value expectedto be associated with the demanded data block 56. When stored in ahigher memory level (e.g., memory channel cache 92), in someembodiments, the demanded data block 56 may pass through one or morelower memory levels (e.g., shared memory-side cache 94) in thememory-side memory sub-system 14B before being output to the memory bus20A.

On the other hand, when the demanded data block 56 results in amemory-side lower memory level miss, the memory-side memory controller34B may determine whether a memory-side cache bypass has been enabled(process block 136). As described above, in some instances, a copy(e.g., instance) of a demanded data block 56 retrieved from a memoryarray 28 (e.g., higher memory level) may additionally be stored in amemory-side cache 24B (e.g., dedicated lower memory level 50) in aneffort to improve operational efficiency of the computing system 10, forexample, by enabling the memory-side memory sub-system 14B to return thedata block 56 from the memory-side cache 24B instead of the memory array28 if the data block 56 is subsequently targeted (e.g., demanded).However, at least in some instances, automatically caching a demandeddata block 56 in a memory-side cache 24B may actually reduce computingsystem operational efficiency, for example, due to the limited storagecapacity of the memory-side cache 24B resulting in another data block 56being prematurely evited and/or activation of a memory page in thememory array 28 at which the data block 56 is stored increasing powerconsumption.

As such, to facilitate improving computing system operationalefficiency, in some embodiments, a (e.g., memory-side and/orprocessor-side) memory controller 34 may selectively disable caching ofa demanded data block 56, which is retrieved from a memory array 28, ina dedicated cache 24. For example, by enabling a memory-side cachebypass, the memory-side memory controller 34B may disable caching of thedemanded data block 56 in a memory-side cache 24B. Additionally oralternatively, by enabling a processor-side cache bypass, aprocessor-side memory controller 34A may disable caching of the demandeddata block 56 in a processor-side cache 24A. Moreover, in someembodiments, the memory controller 34 may selectively disable caching(e.g., enabling cache bypass) based at least in part on a current stateof the memory array 28 and/or a current state of one or more memorypages in the memory array 28.

To help illustrate, an example of a process 142 for selectively enablinga (e.g., memory-side and/or processor-side) cache bypass is described inFIG. 10. Generally, the process 142 includes determining a demandedstorage location (process block 144), determining a current state of amemory array included the demanded storage location (process block 146),and determining whether a demanded memory page is currently activated(decision block 148). Additionally, the process 142 includes determiningwhether a next target confidence associated with a currently activatedmemory page is less than a first cache confidence threshold when thedemanded memory page is currently activated (decision block 150) anddetermining whether the next target confidence associated with thecurrently activated memory page is greater than a second cacheconfidence threshold when the demanded memory page is not currentlyactivated (decision block 152).

Furthermore, the process 142 includes enabling a cache bypass when thedemanded memory page is currently activated and the next targetconfidence associated with the currently activated memory page is notless than the first cache confidence threshold or when the demandedmemory page is not currently activated and the next target confidenceassociated with the currently activated memory page is greater than thesecond cache confidence threshold (process block 154). Moreover, theprocess 142 includes disabling the cache bypass when the demanded memorypage is currently activated and the next target confidence associatedwith the currently activated memory page is less than the first cacheconfidence threshold or when the demanded memory page is not currentlyactivated and the next target confidence associated with the currentlyactivated memory page is not greater than the second cache confidencethreshold (process block 156).

Although described in a particular order, which represents a particularembodiment, it should be noted that the process 142 may be performed inany suitable order. Additionally, embodiments of the process 142 mayomit process blocks and/or include additional process blocks. Moreover,in some embodiments, the process 142 may be implemented at least in partby executing instructions stored in a tangible, non-transitory,computer-readable medium, such as memory implemented in a memorycontroller 34, using processing circuitry, such as a processorimplemented in the memory controller 34.

Accordingly, in some embodiments, a (e.g., memory-side and/orprocessor-side) memory controller 34 may determine a storage location(e.g., memory address) for which access is being demanded (process block144). For example, the demanded storage location may be a storagelocation in a memory array 28 at which a data block 56 targeted forretrieval by a read (e.g., demand) memory access request is expected tobe stored. Additionally or alternatively, the demanded storage locationmay be a storage location in a memory array 28 at which a write (e.g.,demand) memory access request targets storage of a data block 56. Inother words, in response to receipt of a demand memory access request,in some embodiments, the memory controller 34 may determine the demandedstorage location (e.g., memory address) associated with the demandmemory access request based at least in part on one or more of itsaccess parameters.

Additionally, the memory controller 34 may determine a current state ofa memory array 28 including the demanded storage location (process block146). As described above, in some embodiments, the current state of amemory array 28 may be indicated via corresponding memory array stateinformation 96. Additionally, as described above, in some embodiments,memory array state information 96 associated with a memory array 28 mayinclude memory page state information (e.g., entries 98) indicative of acurrent state of one or more memory pages (e.g., memory cell rows 88) inthe memory array 28. In other words, at least in such embodiments, thememory array state information 96 may include memory page stateinformation associated with a memory page including the demanded storagelocation and/or memory page state information associated with a memorypage in the memory array 28 that is currently in its activated state,for example, due to the memory page being targeted by a directlyprevious memory access request.

Moreover, as described above, in some embodiments, memory page stateinformation associated with a memory page may include an activationstate parameter, which indicates whether the memory page is currently inits activated state or its deactivated state, and a page hit confidenceparameter, which is indicative of the confidence (e.g., likelihoodand/or probability) that a subsequent (e.g., next successive) memoryaccess request will target the memory page. As such, at least in suchembodiments, the memory controller 34 may determine (e.g., predict) theconfidence that a next subsequent memory access request will target thecurrently activated memory page based at least in part on the value of apage hit confidence parameter indicated in associated memory page stateinformation (process block 158). Additionally, at least in suchembodiments, the memory controller 34 may determine a current activationstate of the demanded memory page (process block 160) and, thus, whetherthe demanded memory page is the currently activated memory page or acurrently deactivated memory page based at least in part on the value ofan activation state parameter indicated in associated memory page stateinformation (decision block 148).

When the demanded memory page is the currently activated memory page,the memory controller 34 may selectively enable cache bypassing (e.g.,disable caching) based at least in part on a comparison of an associatedpage hit confidence parameter and a first cache confidence threshold(decision block 150). In particular, when the value of the associatedpage hit confidence parameter is less than the first cache confidencethreshold, the memory controller 34 may determine (e.g., predict) that asubsequent (e.g., next successive) memory access request is expected(e.g., more likely than not) to target a different memory page and,thus, the (e.g., demanded and/or currently activated) memory pageincluding the demanded storage location is expected to be in itsdeactivated state access to the memory page is subsequently targeted. Assuch, when the value of the associated page hit confidence parameter isless than the first cache confidence threshold, the memory controller 34may disable cache bypassing, thereby enabling caching of a (e.g.,candidate) data block 56, which is retrieved from and/or to be stored inthe memory array 28, in a dedicated (e.g., processor-side and/ormemory-side) cache 24 (process block 156). At least in some instances,selectively disabling a (e.g., memory-side and/or processor-side) cachebypass in this manner may facilitate improving computing systemoperational efficiency, for example, by enabling the candidate datablock 56, if subsequently targeted, to be supplied from the cache 24instead of a memory page in a memory array 28 that is expected to be inits deactivated state.

Conversely, when the demanded memory page is the currently activatedmemory page and the value of an associated page hit confidence parameteris not less than the first cache confidence threshold, the memorycontroller 34 may determine (e.g., predict) that a subsequent (e.g.,next successive) memory access request is expected (e.g., more likelythan not) to target the same memory page and, thus, the (e.g., demandedand/or currently activated) memory page including the demanded storagelocation is expected to be in its activated state when subsequentlytargeted. As such, when the value of the associated page hit confidenceparameter is not less than the first cache confidence threshold, thememory controller 34 may enable cache bypassing, thereby disablingcaching of a (e.g., candidate or demanded) data block 56, which isretrieved from and/or to be stored in the memory array 28, in adedicated (e.g., processor-side and/or memory-side) cache 24 (processblock 154). At least in some instances, selectively enabling a (e.g.,memory-side and/or processor-side) cache bypass in this manner mayfacilitate improving computing system operational efficiency, forexample, by reducing likelihood of polluting the cache 24 and insteadenabling the candidate data block 56, if subsequently demanded, to besupplied from a memory page that is expected to be in its activatedstate.

On the other hand, when the demanded memory page is a currentlydeactivated memory page, the memory controller 34 may selectively enablecache bypassing (e.g., disable caching) based at least in part on acomparison of a page hit confidence parameter associated with acurrently activated memory page and a second cache confidence threshold(decision block 152). In particular, when the value of the page hitconfidence parameter associated with the currently activated memory pageis greater than the second cache confidence threshold, the memorycontroller 34 may determine (e.g., predict) that a subsequent (e.g.,next successive) memory access request is expected (e.g., more likelythan not) to target the currently activated memory page and, thus, the(e.g., demanded and/or currently deactivated) memory page including thedemanded storage location is expected to be in its deactivated statewhen access is subsequently targeted. As such, when the value of thepage hit confidence parameter associated with the currently activatedmemory page is greater than the second cache confidence threshold, thememory controller 34 may enable cache bypassing, thereby disablingcaching of a (e.g., candidate or demanded) data block 56, which isretrieved from and/or to be stored in the memory page of the memoryarray 28, in a dedicated (e.g., processor-side and/or memory-side) cache24 (process block 154). At least in some instances, selectively enablinga (e.g., memory-side and/or processor-side) cache bypass in this mannermay facilitate improving computing system operational efficiency, forexample, by reducing likelihood of the candidate data block 56 pollutingthe cache 24 and/or obviating power consumption resulting from -activating the target memory page and subsequently re-activating thecurrently activated memory page.

Conversely, when the demanded memory page is a currently deactivatedmemory page and the value of the page hit confidence parameterassociated with the currently activated memory page is not greater thanthe second cache confidence threshold, the memory controller 34 maydetermine (e.g., predict) that a subsequent memory access request isexpected (e.g., more likely than not) to target a (e.g., currentlydeactivated) memory page different from the currently activated memorypage. However, since a memory array 28 may concurrently include multipledeactivated memory pages, at least in some instances, such adetermination may have limited relevance to whether the demanded memorypage will be in its activated state or its deactivated state whensubsequent targeted. As such, when the value of the page hit confidenceparameter is not greater than the second cache confidence threshold, thememory controller 34 may disable cache bypassing, thereby enablingcaching of a (e.g., candidate) data block 56, which is retrieved fromand/or to be stored in the memory array 28, in a dedicated (e.g.,processor-side and/or memory-side) cache 24 (process block 156). Atleast in some instances, selectively disabling a (e.g., memory-sideand/or processor-side) cache bypass in this manner may facilitateimproving computing system operational efficiency, for example, byenabling the candidate data block 56, if subsequently targeted, to besupplied from the cache 24 instead of the memory array 28.

Nevertheless, in other embodiments, the memory controller 34 mayautomatically disable a cache bypass when the demanded memory page iscurrently in its deactivated state. Moreover, in some embodiments, thevalue of the first cache confidence threshold, which is used when thedemanded memory page is in its activated state, and the value of thesecond cache confidence threshold, which is used when the demandedmemory page is in its deactivated state, may differ. For example, thevalue of the first cache confidence threshold may be greater than thevalue of the second cache confidence threshold or vice versa. In otherembodiments, the value of the first cache confidence threshold may matchthe value of the second cache confidence threshold. In this manner, a(e.g., memory-side and/or processor-side) memory sub-system 14 mayoperate to selectively enable a (e.g., memory-side and/orprocessor-side) cache bypass based at least in part on a current stateof a memory array 28 implemented in the memory sub-system 14.

Returning to the process 126 of FIG. 9, when the memory-side cachebypass is enabled, the memory-side memory controller 34B may instructthe memory-side memory sub-system 14B to output (e.g., return) thedemanded data block 56 from a memory array 28 directly to theprocessor-side of the computing system 10 via the memory bus 20A(process block 138). On the other hand, when the memory-side cachebypass is not enabled (e.g., disabled), the memory-side memorycontroller 34B may instruct the memory-side memory sub-system 14B tostore a copy (e.g., instance) of the demanded data block 56 retrievedfrom the memory array 28 in a memory-side cache 24B (process block 140)and to output (e.g., return) the demanded data block 56 to theprocessor-side of the computing system 10 via the memory bus 20A(process block 134). In this manner, a memory-side memory sub-system 14Bmay operate to return a data block 56 demanded by a processor-side of acomputing system 10.

Returning to the process 108 of FIG. 8, once the demanded data block isreturned from the memory-side of the computing system 10, theprocessor-side memory controller 34A may determine whether aprocessor-side cache bypass is enabled, for example, using the process142 described in FIG. 10. When the processor-side cache bypass isenabled, the processor-side memory controller 34A may instruct theprocessor-side memory sub-system 14A to supply the demanded data block56 directly to one or more registers 22 of the processing circuitry 16(process block 122). On the other hand, when the processor-side cachebypass is not enabled (e.g., disabled), the processor-side memorycontroller 34A may instruct the processor-side memory sub-system 14A tostore a copy (e.g., instance) of the demanded data block 56 returnedfrom the memory-side of the computing system 10 in a processor-sidecache 24A (process block 124) and to output the demanded data block 56to one or more registers 22 of the processing circuitry 16 (processblock 114).

In this manner, a processor-side of a computing system 10 may operate toreturn a data block 56 demanded by a processing sub-system 12 of thecomputing system 10. As described above, in some embodiments, aprocessing sub-system 12 may additionally or alternatively demandstorage of a data block 56 in a memory sub-system 14, for example, via awrite (e.g., demand) memory access request. In other words, in responseto receipt of a write memory access request, the memory sub-system 14may store a data block received along with and/or included in the writememory access request in one or more memory levels implemented therein.

To help illustrate, an example of a process 162 for operating a memorysub-system 14 is described in FIG. 11. Generally, the process 162includes receiving a write memory access request from a processingsub-system (process block 164), determining whether a cache bypass isenabled (decision block 166), and storing a data block at a demandedstorage location in a memory array (process block 168). Additionally,when the cache bypass is not enabled, the process 162 includes storing acopy of the data block in a cache (process block 170).

Although described in a particular order, which represents a particularembodiment, it should be noted that the process 162 may be performed inany suitable order. Additionally, embodiments of the process 162 mayomit process blocks and/or include additional process blocks. Moreover,in some embodiments, the process 162 may be implemented at least in partby executing instructions stored in a tangible, non-transitory,computer-readable medium, such as memory implemented in a memorycontroller 34, using processing circuitry, such as a processorimplemented in the memory controller 34.

Accordingly, in some embodiments, a (e.g., memory-side and/orprocessor-side) memory controller 34 implemented in a memory sub-system14 of a computing system 10 may receive a write (e.g., demand) memoryaccess request output from a processing sub-system 12 of the computingsystem 10 (process block 164). For example, a processor-side memorycontroller 34A may receive the write memory access request via one ormore processor-side internal buses 20B. Additionally or alternatively, amemory-side bus interface 70 may receive the write memory access requestfrom a memory bus 20A and route the write memory access request to amemory-side memory controller 34B via one or more memory-side internalbuses 20C.

In any case, the memory controller 34 may then determine whether a(e.g., processor-side and/or memory-side) cache bypass is enabled, forexample, using the process 142 described in FIG. 10. When the cachebypass is not enabled, the memory controller 34 may instruct the memorysub-system 14 to store a data block 56 received along with and/orincluded in the write memory access request in one or more caches 24(e.g., dedicated lower memory levels 50) (process block 170) as well asat a storage location in a memory array 28 demanded (e.g., targeted) bythe write memory access request (process block 168). In someembodiments, the memory controller 34 may determine the demanded storagelocation based at least in part on one or more write access parametersincluded in the write memory access request.

On the other hand, when the cache bypass is enabled, the memorycontroller 34 may instruct the memory sub-system 14 to store the datablock 56 received along with and/or included in the write memory accessrequest at the demanded storage location in the memory array 28, forexample, without storing a copy of the data block in the one or morecaches 24 (process block 168). In this manner, a memory sub-system 14may operate to selectively disable caching of a data block 56, which isdemanded for storage in a memory array 28, based at least in part onmemory array state information 96 indicative of a current state of thememory array 28 and/or the current state of one or more memory pages(e.g., memory cell rows 88) in the memory array 28. In some embodiments,a memory sub-system 14 may additionally or alternatively selectivelydisable pre-fetching of a data block 56 from a memory array 28 to adedicated lower (e.g., cache and/or pre-fetch buffer) memory level 50based at least in part on memory array state information 96 indicativeof a current state of the memory array 28 and/or the current state ofone or more memory pages in the memory array 28.

To help illustrate, an example of a process 172 for selectivelydisabling pre-fetching to a dedicated lower (e.g., cache and/orpre-fetch buffer) memory level 50 is described in FIG. 12. Generally,the process includes determining a candidate pre-fetch data block(process block 174), determining a current state of a memory arraystoring the candidate pre-fetch data block (process block 176), anddetermining whether a candidate pre-fetch memory page is currentlyactivated (decision block 178). Additionally, the process 172 includesdetermining whether a next target confidence associated with a currentlyactivated memory page is less than a first pre-fetch confidencethreshold when the candidate pre-fetch memory page is currentlyactivated (decision block 180) and determining whether the next targetconfidence associated with the currently activated memory page isgreater than a second pre-fetch confidence threshold when the candidatepre-fetch memory page is not currently activated (decision block 182).

Furthermore, the process 172 includes disabling pre-fetching of thecandidate pre-fetch data block to a dedicated lower memory level whenthe candidate pre-fetch memory page is currently activated and the nexttarget confidence associated with the currently activated memory page isnot less than the first pre-fetch confidence threshold or when thecandidate pre-fetch memory page is not currently activated and the nexttarget confidence associated with the currently activated memory page isgreater than the second pre-fetch confidence threshold (process block184). Moreover, the process 172 includes enabling pre-fetching of thecandidate data block to the dedicated lower memory level when thecandidate pre-fetch memory page is currently activated and the nexttarget confidence associated with the currently activated memory page isless than the first pre-fetch confidence threshold or when the candidatepre-fetch memory page is not currently activated and the next targetconfidence associated with the currently activated memory page is notgreater than the second pre-fetch confidence threshold (process block186).

Although described in a particular order, which represents a particularembodiment, it should be noted that the process 172 may be performed inany suitable order. Additionally, embodiments of the process 172 mayomit process blocks and/or include additional process blocks. Moreover,in some embodiments, the process 172 may be implemented at least in partby executing instructions stored in a tangible, non-transitory,computer-readable medium, such as memory implemented in a memorycontroller 34, using processing circuitry, such as a processorimplemented in the memory controller 34.

Accordingly, in some embodiments, a (e.g., memory-side and/orprocessor-side) memory controller 34 may determine a candidate datablock 56 to be considered for pre-fetching to a dedicated lower (e.g.,cache and/or pre-fetch buffer) memory level 50 (process block 144). Asdescribed above, in some embodiments, a candidate data block 56 may betargeted for pre-fetching by a pre-fetch (e.g., read) memory accessrequest. Thus, at least in such embodiments, the memory controller 34may identify a storage location in a memory array 28 at which thecandidate data block 56 targeted for pre-fetching is expected to bestored based at least in part on one or more read access parametersincluded in the pre-fetch memory access request. In other words, inresponse to receipt of a pre-fetch memory access request, in someembodiments, the memory controller 34 may determine a candidatepre-fetch memory page in which the candidate data block 56 is storedbased at least in part on one or more of its read (e.g., pre-fetch)access parameters.

Additionally, the memory controller 34 may determine a current state ofa memory array 28 including the candidate pre-fetch memory page (processblock 176). As described above, in some embodiments, the current stateof a memory array 28 may be indicated via corresponding memory arraystate information 96. Additionally, as described above, in someembodiments, memory array state information 96 associated with a memoryarray 28 may include memory page state information (e.g., entries 98)indicative of a current state of one or more memory pages (e.g., memorycell rows 88) in the memory array 28.

Moreover, as described above, in some embodiments, memory page stateinformation associated with a memory page may include an activationstate parameter, which indicates whether the memory page is currently inits activated state or its deactivated state, and a page hit confidenceparameter, which is indicative of the confidence (e.g., likelihoodand/or probability) that a subsequent (e.g., next successive) memoryaccess request will target the memory page. Thus, at least in suchembodiments, the memory controller 34 may determine (e.g., predict) theconfidence that a subsequent memory access request will target acurrently activated memory page based at least in part on the value of apage hit confidence parameter indicated in associated memory page stateinformation (process block 188). Additionally, at least in suchembodiments, the memory controller 34 may determine a current activationstate of the candidate pre-fetch memory page (process block 190) and,thus, whether the candidate pre-fetch memory page is the currentlyactivated memory page or a currently deactivated memory page based atleast in part on the value of an activation state parameter indicated inassociated memory page state information (decision block 178).

When the candidate pre-fetch memory page is the activated memory page,the memory controller 34 may selectively disable pre-fetching based atleast in part on a comparison of an associated page hit confidenceparameter and a first pre-fetch confidence threshold (decision block180). In some embodiments, the value of the first pre-fetch confidencethreshold may differ from the value of a first cache confidencethreshold, which is used to selectively disable caching when a demanded(e.g., targeted) memory page is currently activated. For example, thevalue of the first pre-fetch confidence threshold may be greater thanthe value of the first cache confidence threshold or vice versa. Inother embodiments, the value of the first pre-fetch confidence thresholdmay match the value of the first cache confidence threshold.

In any case, when the candidate pre-fetch memory page is the activatedmemory page and the value of an associated page hit confidence parameteris less than the first pre-fetch confidence threshold, the memorycontroller 34 may determine (e.g., predict) that a subsequent (e.g.,next successive) memory access request is expected (e.g., more likelythan not) to target a different (e.g., currently deactivated) memorypage and, thus, the (e.g., candidate pre-fetch and/or currentlyactivated) memory page storing the candidate pre-fetch data block 56 isexpected to be in its deactivated state when subsequently targeted. Assuch, when the value of the associated page hit confidence parameter isless than the first pre-fetch confidence threshold, the memorycontroller 34 may enable (e.g., fulfill) pre-fetching of the candidatedata block 56 from the memory array 28 such that a copy of the candidatedata block 56 is stored in a dedicated lower memory level 50, such as adedicated cache 24 and/or a dedicated pre-fetch buffer 32 (process block186). At least in some instances, selectively enabling pre-fetching inthis manner may facilitate improving computing system operationalefficiency, for example, by enabling the candidate data block 56, ifsubsequently targeted, to be supplied from the dedicated lower memorylevel 50 instead of a memory page in the memory array 28 that isexpected to be in its deactivated state.

Conversely, when the candidate pre-fetch memory page is the activatedmemory page and the value of an associated page hit confidence parameteris not less than the first pre-fetch confidence threshold, the memorycontroller 34 may determine (e.g., predict) that a subsequent (e.g.,next successive) memory access request is expected (e.g., more likelythan not) to target the same memory page and, thus, the (e.g., candidatepre-fetch and/or currently activated) memory page storing the candidatedata block 56 is expected to be in its activated state when access ussubsequently targeted. As such, when the value of the associated pagehit confidence parameter is not less than the first pre-fetch confidencethreshold, the memory controller 34 may disable (e.g., block and/orcancel) pre-fetching of the candidate data block 56 from the memoryarray 28 to the dedicated lower (e.g., cache and/or pre-fetch buffer)memory level 50 (process block 184). At least in some instances,selectively disabling pre-fetching in this manner may facilitateimproving computing system operational efficiency, for example, byreducing likelihood of polluting the dedicated lower memory level 50 andinstead enabling the candidate data block 56, if subsequently demanded,to be supplied from a memory page that is expected to be in itsactivated state.

On the other hand, when the candidate pre-fetch memory page is adeactivated memory page, the memory controller 34 may selectivelydisable pre-fetching based at least in part on a comparison of a pagehit confidence parameter associated with a currently activated memorypage and a second pre-fetch confidence threshold (decision block 182).In some embodiments, the value of the second pre-fetch confidencethreshold may differ from the value of a second cache confidencethreshold, which is used to selectively disable caching when a demanded(e.g., targeted) memory page is in its deactivated state. For example,the value of the second pre-fetch confidence threshold may be greaterthan the value of the second cache confidence threshold or vice versa.In other embodiments, the value of the second pre-fetch confidencethreshold may match the value of the second cache confidence threshold.

In any case, when the candidate pre-fetch memory page is a deactivatedmemory page and the value of a page hit confidence parameter associatedwith a currently activated memory page is greater than the second cacheconfidence threshold, the memory controller 34 may determine (e.g.,predict) that a subsequent (e.g., next successive) memory access requestis expected (e.g., more likely than not) to target the currentlyactivated memory page and, thus, the (e.g., candidate pre-fetch and/orcurrently deactivated) memory page storing the candidate data block 56is expected to be in its deactivated state when subsequently targeted.As such, when the value of the page hit confidence parameter associatedwith the currently activated memory page is greater than the secondpre-fetch confidence threshold, the memory controller 34 may disable(e.g., block and/or cancel) pre-fetching of the candidate data block 56from the memory array 28 to the dedicated lower (e.g., cache and/orpre-fetch buffer) memory level 50 (process block 184). At least in someinstances, selectively disabling pre-fetching in this manner mayfacilitate improving computing system operational efficiency, forexample, by reducing likelihood of the candidate data block 56 pollutingthe dedicated lower memory level 50 and/or obviating power consumptionresulting from activating the candidate pre-fetch (e.g., currentlydeactivated) memory page and subsequently re-activating the currentlyactivated memory page.

Conversely, when the candidate pre-fetch memory page is a deactivatedmemory page and the value of a page hit confidence parameter associatedwith a currently activated memory page is not greater than the secondpre-fetch confidence threshold, the memory controller 34 may determine(e.g., predict) that a subsequent memory access request is expected totarget a (e.g., currently deactivated) memory page different from thecurrently activated memory page. However, since a memory array 28 mayconcurrently include multiple deactivated memory pages, at least in someinstances, such a determination may have limited relevance to whetherthe candidate pre-fetch memory page will be in its activated state orits deactivated state when targeted by a subsequent memory accessrequest. As such, when the value of the page hit confidence parameter isnot greater than the second pre-fetch confidence threshold, the memorycontroller 34 may enable (e.g., fulfill) pre-fetching of the candidatedata block 56 from the memory array 28 such that a copy of the candidatedata block 56 is stored in the dedicated lower (e.g., pre-fetch bufferand/or cache) memory level 50. At least in some instances, selectivelyenabling pre-fetching in this manner may facilitate improving computingsystem operational efficiency, for example, by enabling the candidatedata block 56, if subsequently targeted, to be supplied from thededicated lower memory level 50 instead of the memory array 28.

Nevertheless, in other embodiments, the memory controller 34 mayautomatically enable pre-fetching to a dedicated lower memory level whenthe candidate pre-fetch memory page is in its deactivated state.Moreover, in some embodiments, the value of the first pre-fetchconfidence threshold, which is used when the candidate pre-fetch memorypage is in its activated state, and the value of the second pre-fetchconfidence threshold, which is used when the candidate pre-fetch memorypage is in its deactivated state, may differ. For example, the value ofthe first pre-fetch confidence threshold may be greater than the valueof the second pre-fetch confidence threshold or vice versa. In otherembodiments, the value of the first pre-fetch confidence threshold maymatch the value of the second pre-fetch confidence threshold.

In this manner, a (e.g., memory-side and/or processor-side) memorysub-system 14 may operate to selectively disable pre-fetching from amemory array based at least in part on a current state of the memoryarray 28. In other words, in some embodiments, a (e.g., memory-sideand/or processor-side) memory controller 34 of the memory sub-system 14may selectively disable fulfillment of one or more pre-fetch (e.g.,read) memory access requests based at least in part on memory arraystate information 96 indicative of the current state of the memory array28 and/or the current state of one or more memory pages in the memoryarray 28. Moreover, as described above, in some embodiments, a memorycontroller 34 may be implemented using multiple controllers (e.g.,control circuitry and/or control logic).

To help illustrate, an example of a portion of a computing system 10,which includes a memory controller 34C implemented using multiplecontrollers, is shown in FIG. 13. In particular, as depicted, the memorycontroller 34C includes a cache controller 36, a pre-fetch controller38, a main (e.g., DRAM) memory controller 40, and a memory-awarecontroller 42. However, it should be appreciated that the depictedexample is merely intended to be illustrative and not limiting. Forexample, in other embodiments, a memory controller 34 may be implementedwith fewer than four controllers or more than four controllers.

In some embodiments, the memory controller 34C may be implemented atleast in part on a processor-side of the computing system 10, forexample, as a processor-side memory controller 34A. Thus, as in thedepicted example, the memory controller 34C may be communicativelycoupled to processing circuitry 16 of a processing sub-system 12implemented on the processor-side of the computing system 10, forexample, via one or more processor-side internal buses 20B. In thismanner, as in the depicted example, the memory controller 34C mayreceive a read (e.g., retrieval) demand 192, which targets return ofcorresponding demanded data 194 from a memory sub-system 14, and/or awrite (e.g., storage) demand 196, which targets storage of correspondingdemanded data 194 in the memory sub-system 14, from the processingcircuitry 16.

Additionally or alternatively, the memory controller 34C may beimplemented at least in part on a memory-side of the computing system10, for example, as a memory-side memory controller 34B. Thus, as in thedepicted example, the memory controller 34C may be communicativelycoupled to control circuitry 197, such as row select circuitry 76 and/orcolumn select circuitry 78, of a memory array 28 implemented on thememory-side of the computing system, for example, via one or morememory-side internal buses 20C. In this manner, as in the depictedexample, the memory controller 34C may output a read (e.g., retrieval)request 198, which targets return of corresponding requested data 200from the memory array 28, and/or a write (e.g., storage) request 202,which requests storage of corresponding requested data 200 in the memoryarray 28, to the control circuitry 197 of the memory array 28.

In fact, in some embodiments, a portion of the memory controller 34C maybe implemented on the processor-side of the computing system 10 whileanother portion of the memory controller 34C may be implemented on thememory-side of the computing system 10. In other words, at least in suchembodiments, the portion of the memory controller 34C implemented on theprocessor-side of the computing system 10 and the portion of the memorycontroller 34C implemented on the memory-side of computing system 10 maybe communicatively coupled via a memory (e.g., external communication)bus 20A. Merely as an illustrative and non-limiting example, the mainmemory controller 40 may be implemented on the memory-side of thecomputing system 10 while the cache controller 36, the pre-fetchcontroller 38, and the memory-aware controller 42 are implemented on theprocessor-side of the computing system 10.

As described above, in some embodiments, a main memory controller 40,such as a DRAM memory controller 34, may generally control operation ofa memory array 28 and, thus, a corresponding memory array memory level.For example, the main memory controller 40 may selectively instruct thecontrol circuitry 197 (e.g., row select circuitry 76) coupled to thememory array 28 to activate a memory page (e.g., memory cell row 88) orto deactivate the memory cell page. Additionally or alternatively, themain memory controller 40 may selectively instruct the control circuitry197 (e.g., column select circuitry 78) to provide (e.g., enable) or toblock (e.g., disable) access (e.g., reading or writing) to a storagelocation (e.g., memory array) in an activated memory page. Thus, as inthe depicted example, the main memory controller 40 determine memoryarray state information 96 indicative of a current state of the memoryarray 28 and/or the current state of one or more memory pages in thememory array 28.

To facilitate improving computing system operational efficiency, asdescribed above, in some embodiments, a memory-aware controller 42 mayselectively disable caching (e.g., enable cache bypassing) of demandeddata 194 in a dedicated cache 24 based at least in part a current stateof a memory array 28. For example, the memory-aware controller 42 mayselectively disable caching of demanded data 194 that is targeted forstorage at a demanded memory address 204 in the memory array 28 by awrite demand 196 received from the processing circuitry 16. Additionallyor alternatively, the memory-aware controller 42 may selectively disablecaching (e.g., enable cache bypassing) of demanded data 194 that isretrieved from a demanded memory address 204 in the memory array 28 inresponse to receipt of a read demand 192 from the processing circuitry16.

Furthermore, as described above, in some embodiments, a cache controller36 may generally control operation (e.g., data storage) of one or morecaches 24 and, thus, corresponding cache (e.g., dedicated lower) memorylevels. Accordingly, as in the depicted example, the cache controller 36may output one or more demanded memory addresses 204, for example, inresponse to receipt of a read demand 192 and/or a write demand 196targeting corresponding demanded data 194. Based at least in part on thememory array state information 96 associated with a currently activatedmemory page in the memory array 28 and/or a memory page that includes acurrently demanded memory address 204, the memory-aware controller 42may return a cache bypass decision 206 that indicates whether storage(e.g., caching) of demanded data 194 associated with the demanded memoryaddress 204 in a dedicated cache 24 is enabled (e.g., cache bypassdisabled) or disabled (e.g., cache bypass enabled).

Moreover, as described above, a dedicated lower memory level 50, such asa cache 24 and/or a pre-fetch buffer 32, generally provides faster dataaccess speed compared to a memory array 28 (e.g., higher memory level).As such, to facilitate improving computing system operationalefficiency, in some embodiments, the memory controller 34C may attemptto retrieve demanded data 194 targeted by a read demand 192 fromdedicated lower memory levels 50 implemented in the computing system 10before progressing to the memory array 28. Thus, as in the depictedexample, the cache controller 36 may output a demanded memory address204 to the main memory controller 40, for example, at least whenassociated demanded data 194 results in a miss in each of the dedicatedlower memory levels 50.

Based at least in part on a demanded memory address 204, the main memorycontroller 40 may output a read request 198 that targets return ofcorresponding demanded data 194 from the memory array 28, for example,as a demand (e.g., read) memory access request. In other words,requested data 200 retrieved from the memory array 28 in response to theread (e.g., demand) request 198 may include demanded data 194 targetedby the processing circuitry 16. Thus, as in the depicted example, themain memory controller 40 may output demanded data 194 retrieved fromthe memory array 28 to the cache controller 36, for example, tofacilitate improving computing system operational efficiency by enablingthe cache controller 36 to selectively disable caching of the demandeddata 194 in a dedicated cache 24 based on the cache bypass decision 206received from the memory-aware controller 42.

As described above, to facilitate further improving computing systemoperational efficiency, in some embodiments, a memory controller 34 mayadditionally or alternatively output a read request 198 that targetsreturn of corresponding requested data 200 from the memory array 28before the requested data 200 is actually demanded by the processingcircuitry 16, for example, as a pre-fetch (e.g., read) memory accessrequest. In other words, requested data 200 retrieved from the memoryarray 28 in response to the read (e.g., pre-fetch) request 198 mayinclude pre-fetched data 208 that has not yet been demanded by theprocessing circuitry 16. Furthermore, as described above, in someembodiments, pre-fetched data 208 may be stored in one or more dedicatedlower (e.g., cache and/or pre-fetch buffer) memory levels 50 implementedin the computing system 10.

Moreover, as described above, in some embodiments, a pre-fetchcontroller 38 may generally control operation (e.g., data storage) inone or more dedicated pre-fetch buffers 32 and, thus, correspondingpre-fetch buffer (e.g., dedicated lower) memory levels. Additionally oralternatively, as described above, the cache controller 36 may generallycontrol operation in one or more dedicated caches 24. Thus, as in thedepicted example, the main memory controller 40 may output pre-fetcheddata 208 to the pre-fetch controller 38 and/or directly to the cachecontroller 36.

However, to facilitate improving computing system operationalefficiency, as described above, in some embodiments, the memory-awarecontroller 42 may selectively disable pre-fetching of data from a memoryarray 28 to a dedicated lower (e.g., cache and/or pre-fetch buffer)memory level 50 based at least in part the current state of the memoryarray 28. In particular, as in the depicted example, the memory-awarecontroller 42 may receive a candidate pre-fetch memory address 210 fromthe pre-fetch controller 38. In some embodiments, the pre-fetchcontroller 38 may identify the candidate pre-fetch memory address 210based at least in part on one or more previously demanded memoryaddresses 204, for example, by determining a previous data accesspattern based at least in part on the one or more previously demandedmemory addresses 204 and predicting a subsequent data access patternincluding the candidate pre-fetch memory address 210 based at least inpart on the previous data access pattern.

Based at least in part on the memory array state information 96associated with a currently activated memory page in the memory array 28and/or a memory page that includes a candidate pre-fetch memory address210, the memory-aware controller 42 may return a pre-fetch decision 212that indicates whether pre-fetching from the candidate pre-fetch memoryaddress 210 is enable or disabled. When disabled, the pre-fetchcontroller 38 may cancel pre-fetching from the candidate pre-fetchmemory address 210, for example, by blocking supply of the candidatepre-fetch memory address 210 to the main memory controller 40. On theother hand, when pre-fetching is enabled, the pre-fetch controller 38may output a corresponding candidate pre-fetch memory address 210 to themain memory controller 40 as a target pre-fetch memory address 214.Based at least in part on a target pre-fetch memory address 214, themain memory controller 40 may output a read (e.g., pre-fetch) request198 that targets return of corresponding pre-fetched data 208 from thememory array 28, for example, as a pre-fetch (e.g., read) memory accessrequest.

In this manner, the techniques described in the present disclosure mayenable a memory sub-system to selectively disable pre-fetching of data,which is stored in a memory array (e.g., higher memory level), to adedicated lower memory level, such as a cache and/or a pre-fetch buffer,based at least in part on a current state of the memory array.Additionally or alternatively, as described above, the techniquesdescribed in the present disclosure may enable a memory sub-system toselectively disable caching of data, which is demanded for storage in amemory array (e.g., higher memory level) and/or demanded for retrievalfrom the memory array, in a cache (e.g., dedicated lower memory level)based at least in part on a current state of the memory array. Asdescribed above, at least in some instances, implementing and/oroperating a memory sub-system to selectively disable pre-fetching and/orcaching in this manner may facilitate improving operational efficiencyof the memory sub-system and, thus, a computing system in which thememory sub-system is deployed, for example, by reducing pollution in adedicated lower (e.g., cache and/or pre-fetch buffer) memory leveland/or reducing power consumption resulting from activation of memorypages in a memory array.

One or more specific embodiments of the present disclosure are describedherein and depicted in the corresponding figures. These describedembodiments are only examples of the presently disclosed techniques.Additionally, in an effort to provide a concise description of theseembodiments, all features of an actual implementation may not bedescribed in the specification. It should be appreciated that in thedevelopment of any such actual implementation, as in any engineering ordesign project, numerous implementation-specific decisions must be madeto achieve the developers' specific goals, such as compliance withsystem-related and business-related constraints, which may vary from oneimplementation to another. Moreover, it should be appreciated that sucha development effort might be complex and time consuming, but maynevertheless be a routine undertaking of design, fabrication, andmanufacture for those of ordinary skill having the benefit of thisdisclosure.

When introducing elements of various embodiments of the presentdisclosure, the articles “a,” “an,” and “the” are intended to mean thatthere are one or more of the elements. The terms “comprising,”“including,” and “having” are intended to be inclusive and mean thatthere may be additional elements other than the listed elements.Additionally, it should be understood that references to “oneembodiment” or “an embodiment” of the present disclosure are notintended to be interpreted as excluding the existence of additionalembodiments that also incorporate the recited features.

The specific embodiments described above have been shown by way ofexample, and it should be understood that these embodiments may besusceptible to various modifications and alternative forms. It should befurther understood that the claims are not intended to be limited to theparticular forms disclosed, but rather to cover all modifications,equivalents, and alternatives falling within the spirit and scope ofthis disclosure.

What is claimed is:
 1. An apparatus comprising: a first hierarchicalmemory level comprising a memory array; a second hierarchical memorylevel comprising a cache, a pre-fetch buffer, or both; and a memorycontroller configured to be communicatively coupled to a memory bus,wherein the memory controller is configured to: determine first stateinformation associated with a memory page in the memory array targetedby a first memory access request received via the memory bus, whereinthe first state information comprises: a first parameter indicative of acurrent activation state of the memory page; and a second parameterindicative of statistical likelihood that a subsequent memory accessrequest will target the memory page; and disable storage of dataassociated with the memory page in the second hierarchical memory levelwhen the first parameter in the first state information associated withthe memory page indicates that the memory page is an activated memorypage and the second parameter in the first state information associatedwith the memory page is greater than or equal to a first threshold. 2.The apparatus of claim 1, wherein the memory controller is configured toinstruct the apparatus to store a copy of the data associated with thememory page in the second hierarchical memory level when the firstparameter in the first state information associated with the memory pageindicates that the memory page is the activated memory page and thesecond parameter in the first state information associated with thememory page is less than the first threshold.
 3. The apparatus of claim1, wherein, when the first parameter in the first state informationassociated with the memory page indicates that the memory page is notthe activated memory page, the memory controller is configured to:determine second state information associated with the activated memorypage in the memory array, wherein the second state information comprisesa third parameter indicative of statistical likelihood that thesubsequent memory access request will target the activated memory page;disable storage of the data associated with the memory page in thesecond hierarchical memory level when the third parameter in the secondstate information associated with the activated memory page is greaterthan a second threshold; and instruct the apparatus to store a copy ofthe data associated with the memory page in the second hierarchicalmemory level when the third parameter in the second state informationassociated with the activated memory page is less than or equal to thesecond threshold.
 4. The apparatus of claim 1, wherein the memorycontroller is configured to enable storage of a copy of the dataassociated with the memory page to in the second hierarchical memorylevel when first parameter in the first state information associatedwith the memory page indicates that the memory page is a deactivatedmemory page.
 5. The apparatus of claim 1, wherein, when the memory pageis transitioned from a deactivated state to an activated state, thememory controller is configured to: update the first parameter in thefirst state information associated with the memory page to indicate thatthe memory page is in the activated state; reset a counter value; andincrement the counter value when a second memory access request to befulfilled directly after the first memory access request targets thememory page.
 6. The apparatus of claim 5, wherein, when the memory pageis subsequently transition from the activated state to the deactivatedstate, the memory controller is configured to: update the firstparameter in the first state information associated with the memory pageto indicate that the memory page is in the deactivated state; and updatea value of the second parameter in the first state informationassociated with the memory page based at least in part on the countervalue resulting when the memory page is transitioned to the deactivatedstate.
 7. The apparatus of claim 5, wherein the memory controller isconfigured to: retrieve a first value of the second parameter in thefirst state information associated with the memory page when the memorypage is transitioned from the deactivated state to the activated state;and update the second parameter in the first state informationassociated with the memory page by overwriting the first value of thesecond parameter with a second value determined based at least in parton an average of the first value retrieved when the memory page isinitially transitioned to the activated state and the counter valueresulting when the memory page is subsequently transitioned to thedeactivated state.
 8. The apparatus of claim 1, wherein, when the firstmemory access request comprises a write memory access request thatdemands that the data be stored at least in the memory array, the memorycontroller is configured to: disable storage of the data in the secondhierarchical memory level at least in part by enabling a cache bypass;instruct the apparatus to store a copy of the data in the secondhierarchical memory level when the cache bypass is not enabled; andinstruct the apparatus to store the data at a memory address in thememory page demanded by the write memory access request without storingthe copy of the data in the second hierarchical memory level when thecache bypass is enabled.
 9. The apparatus of claim 1, comprisingprocessing circuitry communicatively coupled to the memory controller,wherein, when the first memory access request comprises a read memoryaccess request that demands return of the data associated with thememory page, the memory controller is configured to: disable storage ofthe data in the second hierarchical memory level at least in part byenabling a cache bypass; instruct the memory array to output the datademanded by the read memory access request from the memory page when thedata is not currently stored in the second hierarchical memory level;instruct the apparatus to store a copy of the data output from thememory array in the second hierarchical memory level when the cachebypass is not enabled; and instruct the apparatus to return the dataoutput from the memory array to the processing circuitry without storingthe copy of the data in the second hierarchical memory level when thecache bypass is enabled.
 10. The apparatus of claim 1, wherein: thefirst memory access request comprises a pre-fetch memory access requestthat targets pre-fetching of the data from a memory address in thememory page; and the memory controller is configured to disable storageof the data in the second hierarchical memory level at least in part byblocking fulfillment of the pre-fetch memory access request.
 11. Amethod comprising: predicting, using memory control circuitry, a storagelocation in a memory array memory level to which processing circuitry ofa computing system will subsequent demand access based at least in parton one or more storage locations in the memory array memory level towhich the processing circuitry has previously demanded access;determining, using the memory control circuitry, a current activationstate of a memory cell row in the memory array memory level comprisingthe storage location; and in response to determining that the currentactivation state of the memory cell row comprising the storage locationis an activated state: predicting, using the memory control circuitry, afirst confidence that a next storage location to which the processingcircuitry will demand access is included in the memory cell rowcomprising the storage location; and instructing, using the memorycontrol circuitry, the computing system to pre-fetch a data block fromthe storage location in the memory array memory level to a cache memorylevel, a pre-fetch buffer memory level, or both before return of thecandidate pre-fetch data block is demanded by the processing circuitryin response to determining that the first confidence that the nextstorage location to which the processing circuitry will demand access isincluded in the memory cell row is greater than a first pre-fetchthreshold.
 12. The method of claim 11, comprising, in response todetermining that the current activation state of the memory cell rowincluding the storage location is the activated state and the firstconfidence that the next storage location will be included in thecandidate memory cell row is less than or equal to the first pre-fetchthreshold: instructing, using the memory control circuitry, thecomputing system to cancel pre-fetching of the data block from storagelocation in the memory array memory level to the cache memory level, thepre-fetch buffer memory level, or both; and instructing, using thememory control circuitry, the computing system to retrieve the datablock from the storage location in the memory array memory level inresponse to subsequently receiving a read demand from the processingcircuitry that demands return of data stored at the storage location inthe memory array memory level.
 13. The method of claim 11, comprising,in response to determining that the current activation state of thememory cell row including the storage location is a deactivated state:predicting, using the memory control circuitry, a second confidence thatthe next storage location to which the processing circuitry will demandaccess is included in a currently activated memory cell row of thememory array memory level; and instructing, using the memory controlcircuitry, the computing system to pre-fetch the data block from thestorage location in the memory array memory level to the cache memorylevel, the pre-fetch buffer memory level, or both before receiving aread demand from the processing circuitry that demands return of datastored at the storage location in the memory array memory level inresponse to determining that the second confidence that the next storagelocation will be included in the currently activated memory cell row ofthe memory array is less than a second pre-fetch threshold.
 14. Themethod of claim 13, comprising, in response to determining that thecurrent activation state of the memory cell row including the storagelocation is the deactivated state and that the second confidence thatthe next storage location will be included in the currently activatedmemory cell row of the memory array memory level is greater than orequal to the second pre-fetch threshold: instructing, using the memorycontrol circuitry, the computing system to cancel pre-fetching of thecandidate pre-fetch data block to the cache memory level, the pre-fetchbuffer memory level, or both; and instructing, using the memory controlcircuitry, the computing system to retrieve the data block from thestorage location in the memory array memory level in response tosubsequently receiving a read demand from the processing circuitry thatdemands return of data stored at the storage location in the memoryarray memory level.
 15. The method of claim 11, comprising, in responseto subsequently receiving a read demand from the processing circuitrythat demands return of data stored at the storage location in the memoryarray memory level: determining, using the memory control circuitry,whether the data block stored at the storage location in the memoryarray memory level results in a hit in the cache memory level, thepre-fetch buffer memory level, or both instructing, using the memorycontrol circuitry, the computing system to supply the data block fromthe cache memory level to one or more registers of the processingcircuitry in response to determining that the data block hits the cachememory level, the computing system to supply the data block from thepre-fetch buffer memory level to the one or more registers of theprocessing circuitry in response to determining that the data block hitsthe pre-fetch buffer memory level, or both; and in response todetermining that the data block does not hit the cache memory level orthe pre-fetch buffer memory level: determining, using the memory controlcircuitry, the current activation state of the memory cell row in thememory array memory level storing the data block; disabling, using thememory control circuitry, a cache bypass to enable caching of a copy ofthe data block retrieved from the memory array memory level in the cachememory level in response to determining that the current activationstate of the memory cell row comprising the storage location is adeactivated state.
 16. The method of claim 11, comprising, in responseto determining that the current activation state of the memory cell rowcomprising the storage location is the activated state: predicting,using the memory control circuitry, the first confidence that the nextstorage location to which the processing circuitry will demand access isincluded in the cell row comprising the storage location; enabling,using the memory control circuitry, the cache bypass to disable cachingof the data block in the cache memory level in response to determiningthat the first confidence that the next storage location to which theprocessing circuitry will demand access is included in the memory cellrow is greater than a cache confidence threshold; and disabling, usingthe memory control circuitry, the cache bypass to enable caching thedata block 1 in the cache memory level in response to determining thatthe first confidence that the next storage location to which theprocessing circuitry will demand access is included in the memory cellrow is less than or equal to the cache confidence threshold.
 17. Atangible, non-transitory, computer-readable medium storing instructionsexecutable by control circuitry of a computing system, wherein theinstructions comprise instructions to: determine, using the controlcircuitry, a memory address in a memory array to which processingcircuitry in the computing system is demanding access; instruct, usingthe control circuitry, the computing system to provide access to ademanded memory page in the memory array comprising the memory addressdemanded by the processing circuitry; determine, using the controlcircuitry, a current activation state of the demanded memory pagecomprising the memory address demanded by the processing circuitry; andin response to determining that the current activation state of thedemanded memory page is an activated state: predict, using the controlcircuitry, a first statistical likelihood that a next memory address tobe targeted directly after the memory address demanded by the processingcircuitry will be in the demanded memory page; and enable, using thecontrol circuitry, a cache bypass to disable caching of a data blockassociated with memory address demanded by the processing circuitry inresponse to determining that the first statistical likelihood that thenext memory address to be targeted directly after the memory addressdemanded by the processing circuity will be in the demanded memory pageis greater than a first cache threshold.
 18. The tangible,non-transitory, computer-readable medium of claim 17, comprisinginstructions to disable, using the control circuitry, the cache bypassto enable caching of the data block associated with memory addressdemanded by the processing circuitry in response to determining that thecurrent activation state of the demanded memory page is the activatedstate and the first statistical likelihood that the next memory addressto be targeted directly after the memory address demanded by theprocessing circuity will be in the demanded memory page is less than orequal to the first cache threshold.
 19. The tangible, non-transitory,computer-readable medium of claim 17, comprising instructions to, inresponse to determining that the current activation state of thedemanded memory page is not the activated state: predict, using thecontrol circuitry, a second statistical likelihood that the next memoryaddress to be targeted directly after the memory address demanded by theprocessing circuitry will be in a currently activated memory page in thememory array; and enable, using the control circuitry, the cache bypassto disable caching of the data block associated with the memory addressdemanded by the processing circuitry in response to determining that thesecond statistical likelihood that the next memory address to betargeted directly after the memory address demanded by the processingcircuitry will be in the currently activated memory page is not lessthan a second cache threshold.
 20. The tangible, non-transitory,computer-readable medium of claim 23, comprising instructions todisable, using the control circuitry, the cache bypass to enable cachingof the data block associated with the memory address demanded by theprocessing circuitry in response to determining that: the secondstatistical likelihood that the next memory address to be targeteddirectly after the memory address demanded by the processing circuitrywill be in the currently activated memory page is less than the secondcache threshold; or the current activation state of the demanded memorypage is not the activated state.